參數(shù)資料
型號(hào)： M25PE80-VMP6
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 8/43頁(yè)
文件大?。?/td> 599K
代理商： M25PE80-VMP6
M25PE80
8/43
OPERATING FEATURES
Sharing the Overhead of Modifying Data
To write or program one (or more) data Bytes, two
instructions are required: Write Enable (WREN),
which is one Byte, and a Page Write (PW) or Page
Program (PP) sequence, which consists of four
Bytes plus data. This is followed by the internal cy-
cle (of duration t
PW
or t
PP
).
To share this overhead, the Page Write (PW) or
Page Program (PP) instruction allows up to 256
Bytes to be programmed (changing bits from 1 to
0) or written (changing bits to 0 or 1) at a time, pro-
vided that they lie in consecutive addresses on the
same page of memory.
An Easy Way to Modify Data
The Page Write (PW) instruction provides a con-
venient way of modifying data (up to 256 contigu-
ous Bytes at a time), and simply requires the start
address, and the new data in the instruction se-
quence.
The Page Write (PW) instruction is entered by
driving Chip Select (S) Low, and then transmitting
the instruction Byte, three address Bytes (A23-A0)
and at least one data Byte, and then driving Chip
Select (S) High. While Chip Select (S) is being
held Low, the data Bytes are written to the data
buffer, starting at the address given in the third ad-
dress Byte (A7-A0). When Chip Select (S) is driv-
en High, the Write cycle starts. The remaining,
unchanged, Bytes of the data buffer are automati-
cally loaded with the values of the corresponding
Bytes of the addressed memory page. The ad-
dressed memory page then automatically put into
an Erase cycle. Finally, the addressed memory
page is programmed with the contents of the data
buffer.
All of this buffer management is handled internally,
and is transparent to the user. The user is given
the facility of being able to alter the contents of the
memory on a Byte-by-Byte basis.
For optimized timings, it is recommended to use
the Page Write (PW) instruction to write all con-
secutive targeted Bytes in a single sequence ver-
sus using several Page Write (PW) sequences
with each containing only a few Bytes (see
Page
Write (PW)
section and
Table 16., AC Character-
istics
).
A Fast Way to Modify Data
The Page Program (PP) instruction provides a fast
way of modifying data (up to 256 contiguous Bytes
at a time), provided that it only involves resetting
bits to 0 that had previously been set to 1.
This might be:
–
when the designer is programming the device
for the first time
–
when the designer knows that the page has
already been erased by an earlier Page Erase
(PE), Sector Erase (SE) or Bulk Erase (BE)
instruction. This is useful, for example, when
storing a fast stream of data, having first
performed the erase cycle when time was
available
–
when the designer knows that the only
changes involve resetting bits to 0 that are still
set to 1. When this method is possible, it has
the additional advantage of minimising the
number of unnecessary erase operations, and
the extra stress incurred by each page.
For optimized timings, it is recommended to use
the Page Program (PP) instruction to program all
consecutive targeted Bytes in a single sequence
versus using several Page Program (PP) se-
quences with each containing only a few Bytes
(see
Page Program (PP)
section and
Table
16., AC Characteristics
).
Polling During a Write, Program or Erase Cycle
A further improvement in the write, program or
erase time can be achieved by not waiting for the
worst case delay (t
PW
, t
PP
, t
PE
, t
SE
or t
BE
). The
Write In Progress (WIP) bit is provided in the Sta-
tus Register so that the application program can
monitor its value, polling it to establish when the
previous cycle is complete.
Reset
An internal Power-On Reset circuit helps protect
against inadvertent data writes. Addition protec-
tion is provided by driving Reset (RESET) Low
during the Power-on process, and only driving it
High when V
CC
has reached the correct voltage
level, V
CC
(min).
Active Power, Standby Power and Deep
Power-Down Modes
When Chip Select (S) is Low, the device is select-
ed, and in the Active Power mode.
When Chip Select (S) is High, the device is dese-
lected, but could remain in the Active Power mode
until all internal cycles have completed (Program,
Erase, Write). The device then goes in to the
Standby Power mode. The device consumption
drops to I
CC1
.
The Deep Power-down mode is entered when the
specific instruction (the Deep Power-down (DP) in-
相關(guān)PDF資料
PDF描述
M25PE80-VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMW6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMW6T 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMW6P COIL CHOKE 27MH .50A RADIAL
M25PE80-VMW6G 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE80-VMP6G 功能描述:閃存 8 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMP6P 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMP6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
M25PE80-VMP6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMP6TP 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*