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參數(shù)資料
| 型號： | M25PE80-VMP6TP |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 26/43頁 |
| 文件大小： | 599K |
| 代理商： | M25PE80-VMP6TP |
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M25PE80
26/43
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decod-
ed, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address Bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 5.
) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 19.
.
Chip Select (S) must be driven High after the
eighth bit of the last address Byte has been
latched in, otherwise the Sector Erase (SE) in-
struction is not executed. As soon as Chip Select
(S) is driven High, the self-timed Sector Erase cy-
cle (whose duration is t
SE
) is initiated. While the
Sector Erase cycle is in progress, the Status Reg-
ister may be read to check the value of the Write
In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Sector Erase cycle,
and is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable
Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector
that contains a page that is Hardware or software
Protected is not executed.
Any Sector Erase (SE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 19. Sector Erase (SE)
Instruction Sequence
Note: Address bits A23 to A19 are Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE80 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6T | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMS6G | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin QFN Tray |
| M25PE80-VMS6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMS6TG | 功能描述:IC FLASH 8MBIT 75MHZ 8QFN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25PE80-VMS6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMW6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
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