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參數資料
| 型號： | M25PE80-VMW6 |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統一部門，串行閃存 |
| 文件頁數： | 19/43頁 |
| 文件大?。?/td> | 599K |
| 代理商： | M25PE80-VMW6 |
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19/43
M25PE80
Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-Byte address (A23-A0) and a
dummy Byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency f
C
, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in
Figure 13.
The first Byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each Byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest ad-
dress is reached, the address counter rolls over to
000000h, allowing the read sequence to be contin-
ued indefinitely.
The Read Data Bytes at Higher Speed
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driv-
en High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 13. Read Data Bytes at Higher Speed (FAST_READ)
Instruction Sequence
and Data-Out Sequence
Note: Address bits A23 to A19 are Don’t Care.
C
D
AI04006
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31
22 21
3
2
1
0
High Impedance
Instruction
24 BIT ADDRESS
0
C
D
S
Q
32 33 34
36 37 38 39 40 41 42 43 44 45 46
7
6
5
4
3
2
0
1
DATA OUT 1
Dummy Byte
MSB
7
6
5
4
3
2
1
0
DATA OUT 2
MSB
MSB
7
47
7
6
5
4
3
2
0
1
35
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| M27128AF6 | NMOS 16K 2K x 8 UV EPROM |
| M27128A-1F6 | NMOS 16K 2K x 8 UV EPROM |
| M27256 | NMOS 256K 32K x 8 UV EPROM |
| M27256-1F1 | NMOS 256K 32K x 8 UV EPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M25PE80-VMW6G | 功能描述:閃存 8 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE80-VMW6P | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
| M25PE80-VMW6TG | 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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