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參數資料
| 型號： | M25PE80-VMW6 |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數： | 23/43頁 |
| 文件大?。?/td> | 599K |
| 代理商： | M25PE80-VMW6 |
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M25PE80
Write to Lock Register (WRLR)
The Write to Lock Register (WRLR) instruction al-
lows bits to be changed in the Lock Registers. Be-
fore it can be accepted, a Write Enable (WREN)
instruction must previously have been executed.
After the Write Enable (WREN) instruction has
been decoded, the device sets the Write Enable
Latch (WEL).
The Write to Lock Register (WRLR) instruction is
entered by driving Chip Select (S) Low, followed
by the instruction code, three address Bytes
(pointing to any address in the targeted sector/
sub-sector) and one data Byte on Serial Data Input
(D).
The instruction sequence is shown in
Figure 17.
Chip Select (S) must be driven High after the
eighth bit of the data Byte has been latched in, oth-
erwise the Write to Lock Register (WRLR) instruc-
tion is not executed.
When the Write to Lock Register (WRLR) instruc-
tion has been successfully executed, the Write En-
able Latch (WEL) bit is reset after a delay time less
than t
SHSL
minimum value.
Any Write to Lock Register (WRLR) instruction,
while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on
the cycle that is in progress.
Figure 17. Write to Lock Register (WRLR) Instruction Sequence
Table 9. Lock Register In
Note: 1. b6-b4 and b1-b0 must be reset to ‘0’.
2. b6-b2 must be reset to ‘0’.
Sector
Bit
Value
All Sectors Except for Sector 0
and Sector 15
b7-b2
‘0’
b1
Sector Lock Down Bit Value (refer to
Table 8.
)
b0
Sector Write Lock Bit Value (refer to
Table 8.
)
Sector 0
Sector 15
b7
‘1’
Only b3 and b2 are taken into account to modify the sub-
sector Write Lock and Lock Down bits
(1)
‘0’
Only b1 and b0 are taken into account to modify the sector
Write Lock and Lock Down bits
(2)
b3
Sub-sector Lock Down Bit value (refer to
Table 8.
)
b2
Sub-sector Write Lock Bit Value (refer to
Table 8.
)
b1
Sector Lock Down Bit Value (refer to
Table 8.
)
b0
Sector Write Lock Bit Value (refer to
Table 8.
)
AI10784
C
D
S
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
Instruction
24-Bit Address
0
7
6
5
4
3
2
0
1
Lock Register
In
39
MSB
MSB
相關PDF資料 |
PDF描述 |
|---|---|
| M25PXX | 4 Mbit Uniform Sector, Serial Flash Memory |
| M27128AF6 | NMOS 16K 2K x 8 UV EPROM |
| M27128A-1F6 | NMOS 16K 2K x 8 UV EPROM |
| M27256 | NMOS 256K 32K x 8 UV EPROM |
| M27256-1F1 | NMOS 256K 32K x 8 UV EPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M25PE80-VMW6G | 功能描述:閃存 8 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE80-VMW6P | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
| M25PE80-VMW6TG | 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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