參數(shù)資料
型號(hào): M25PE80-VMW6G
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 10/43頁
文件大?。?/td> 599K
代理商: M25PE80-VMW6G
M25PE80
10/43
modification to the Write Lock and Lock
Down Bits cannot be performed. A reset,
or power-up, is required before changes to
these bits can be made. When the Lock
Down Bit is reset, ‘0’, the Write Lock and
Lock Down Bits can be changed.
The Write Lock Bit and the Lock Down Bit are
volatile and their value is reset to ‘0’ after a
Power-Down or a Reset.
The definition of the Lock Register bits is given
in
Table 8., Lock Register Out
.
Refer to
Table 3.
and
Table 4.
for details on
the Software Protection for sectors 1 to 14 and
0 and 15, respectively.
Figure 6.
shows the the
Software Protection scheme.
Table 3. Software Protection Truth Table (Sectors 1 to 14)
Table 4. Software Protection Scheme Truth Table (Sectors 0 and 15)
Note: 1. All other bits combinations are not-applicable.
2. For more details, refer to the description of the
Write to Lock Register (WRLR)
instruction.
Sector Lock
Register
Protection Status
Lock
Down
Bit
Write
Lock
Bit
0
0
Sector Unprotected from Program/Erase/Write operations, Protection Status Reversible
0
1
Sector Protected from Program/Erase/Write operations, Protection Status Reversible
1
0
Sector Unprotected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
1
1
Sector Protected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
Sector Lock
Register
Sub-Sector
Lock Register
Protection Status
Lock
Down
Bit
Write
Lock
Bit
Lock
Down
Bit
Write
Lock
Bit
0
0
0
0
Current Sub-Sector Unprotected from Program/Erase/Write operations,
Current Sub-Sector Protection Status Reversible
0
1
Current Sub-Sector Protected from Program/Erase/Write operations,
Current Sub-Sector Protection Status Reversible.
1
0
Current Sub-Sector Unprotected from Program/Erase/Write operations, Current
Sub-Sector Protection Status cannot be changed except by a Reset or Power-up.
1
1
Current Sub-Sector Protected from Program/Erase/Write operations, Current
Sub-Sector Protection Status cannot be changed except by a Reset or Power-up.
1
0
1
All Sub-Sectors Protected from Program/Erase/Write operations, Current Sub-
Sector Protection Status Reversible
1
1
All Sub-Sectors Protected from Program/Erase/Write operations, Current Sub-
sector Protection Status cannot be changed except by a Reset or Power-up.
1
0
1
0
Current Sub-Sector Unprotected from Program/Erase/Write operations, All Sub-
sectors Protection Status cannot be changed except by a Reset or Power-up
1
1
Current Sub-Sector Protected from Program/Erase/Write operations, All Sub-
sectors Protection Status cannot be changed except by a Reset or Power-up
1
1
1
All Sub-sectors Protected with their Protection Status cannot be changed except
by a Reset or Power-up.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE80-VMW6G_NUD 制造商:Micron Technology Inc 功能描述:
M25PE80-VMW6P 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMW6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
M25PE80-VMW6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMW6TP 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel