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參數(shù)資料
| 型號： | M25PE80-VMW6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 16/43頁 |
| 文件大小： | 599K |
| 代理商： | M25PE80-VMW6G |
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M25PE80
16/43
Read Identification (RDID)
The Read Identification (RDID) instruction allows
the 8-bit manufacturer identification to be read, fol-
lowed by two Bytes of device identification. The
manufacturer identification is assigned by JEDEC,
and has the value 20h for STMicroelectronics. The
device identification is assigned by the device
manufacturer, and indicates the memory type in
the first Byte (80h), and the memory capacity of
the device in the second Byte (14h).
Any Read Identification (RDID) instruction while
an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in
progress.
The device is first selected by driving Chip Select
(S) Low. Then, the 8-bit instruction code for the in-
struction is shifted in. This is followed by the 24-bit
device identification, stored in the memory, being
shifted out on Serial Data Output (Q), each bit be-
ing shifted out during the falling edge of Serial
Clock (C).
The instruction sequence is shown in
Figure 10.
.
The Read Identification (RDID) instruction is termi-
nated by driving Chip Select (S) High at any time
during data output.
When Chip Select (S) is driven High, the device is
put in the Stand-by Power mode. Once in the
Stand-by Power mode, the device waits to be se-
lected, so that it can receive, decode and execute
instructions.
Table 7. Read Identification (RDID) Data-Out Sequence
Figure 10. Read Identification (RDID) Instruction Sequence and Data-Out Sequence
Manufacturer Identification
Device Identification
Memory Type
Memory Capacity
20h
80h
14h
C
D
S
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
Instruction
0
AI06809b
Q
Manufacturer Identification
High Impedance
MSB
15 14 13
3
2
1
0
Device Identification
MSB
16 17 18
28 29 30 31
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE80-VMW6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PXX | 4 Mbit Uniform Sector, Serial Flash Memory |
| M27128AF6 | NMOS 16K 2K x 8 UV EPROM |
| M27128A-1F6 | NMOS 16K 2K x 8 UV EPROM |
| M27256 | NMOS 256K 32K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE80-VMW6P | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
| M25PE80-VMW6TG | 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6TP | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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