參數(shù)資料
型號： M25PE80-VMW6P
廠商： 意法半導(dǎo)體
英文描述： COIL CHOKE 27MH .50A RADIAL
中文描述： 8兆位，低電壓，頁面與字節(jié)可擦除串行閃存更改性，50MHz的SPI總線，標準品出
文件頁數(shù)： 14/43頁
文件大?。?/td> 599K
代理商： M25PE80-VMW6P
M25PE80
14/43
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-Byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in
Table 6.
Every instruction sequence starts with a one-Byte
instruction code. Depending on the instruction,
this might be followed by address Bytes, or by data
Bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read
Data Bytes at Higher Speed (Fast_Read), Read
Identification (RDID), Read Status Register (RD-
SR), or Read Lock Register (RDLR) instruction,
the shifted-in instruction sequence is followed by a
data-out sequence. Chip Select (S) can be driven
High after any bit of the data-out sequence is be-
ing shifted out.
In the case of a Page Write (PW), Page Program
(PP), Write to Lock Register (WRLR), Page Erase
(PE), Sector Erase (SE), Bulk Erase (BE), Write
Enable (WREN), Write Disable (WRDI), Deep
Power-down (DP) or Release from Deep Power-
down (RDP) instruction, Chip Select (S) must be
driven High exactly at a Byte boundary, otherwise
the instruction is rejected, and is not executed.
That is, Chip Select (S) must driven High when the
number of clock pulses after Chip Select (S) being
driven Low is an exact multiple of eight.
All attempts to access the memory array during a
Write cycle, Program cycle or Erase cycle are ig-
nored, and the internal Write cycle, Program cycle
or Erase cycle continues unaffected.
Table 6. Instruction Set
Instruction
Description
One-Byte Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
RDID
Read Identification
1001 1111
9Fh
0
0
1 to 3
RDSR
Read Status Register
0000 0101
05h
0
0
1 to
∞
WRLR
Write to Lock Register
1110 0101
E5h
3
0
1
RDLR
Read Lock Register
1110 1000
E8h
3
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to
∞
FAST_READ Read Data Bytes at Higher Speed
0000 1011
0Bh
3
1
1 to
∞
PW
Page Write
0000 1010
0Ah
3
0
1 to 256
PP
Page Program
0000 0010
02h
3
0
1 to 256
PE
Page Erase
1101 1011
DBh
3
0
0
SE
Sector Erase
1101 1000
D8h
3
0
0
BE
Bulk Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
RDP
Release from Deep Power-down
1010 1011
ABh
0
0
0
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE80-VMW6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
M25PE80-VMW6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMW6TP 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PF32-VMW6G 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays
M25PF32-VMW6TG 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel
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