參數(shù)資料
型號： M25PE80-VMW6P
廠商： 意法半導(dǎo)體
英文描述： COIL CHOKE 27MH .50A RADIAL
中文描述： 8兆位，低電壓，頁面與字節(jié)可擦除串行閃存更改性，50MHz的SPI總線，標準品出
文件頁數(shù)： 20/43頁
文件大?。?/td> 599K
代理商： M25PE80-VMW6P
M25PE80
20/43
Read Lock Register (RDLR)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Lock
Register (RDLR) instruction is followed by a 3-
Byte address (A23-A0) pointing to any location in-
side the concerned sector (or sub-sector). Each
address bit is latched-in during the rising edge of
Serial Clock (C). Then the value of the Lock Reg-
ister is shifted out on Serial Data Output (Q), each
bit being shifted out, at a maximum frequency f
C
,
during the falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 14.
The Read Lock Register (RDLR) instruction is ter-
minated by driving Chip Select (S) High at any
time during data output.
Any Read Lock Register (RDLR) instruction, while
an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle
that is in progress.
Table 8. Lock Register Out
Note: 1. Valid only for sector 0 and sector 15 (the value ‘0’ is returned for other sectors).
Figure 14. Read Lock Register (RDLR) Instruction Sequence and Data-Out Sequence
Bit
Bit Name
Value
Function
b7-b4
Reserved
b3
Sub-sector Lock Down
(1)
‘1’
The Write Lock and Lock Down Bits cannot be changed Once a ‘1’ is
written to the Lock Down Bit it cannot be cleared to ‘0’ except by a
Reset or power-up.
‘0’
The Write Lock and Lock Down Bits can be changed by writing new
values to them. (Default value).
b2
Sub-sector Write Lock
(1)
‘1’
Write, Program and Erase operations in this sub-sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sub-sector are executed
and will modify the sub-sector contents. (Default value).
b1
Sector Lock Down
‘1’
The Write Lock and Lock Down Bits cannot be changed. Once a ‘1’ is
written to the Lock Down Bit it cannot be cleared to ‘0’, except by a
Reset or power-up.
‘0’
The Write Lock and Lock Down Bits can be changed by writing new
values to them. (Default value).
b0
Sector Write Lock
‘1’
Write, Program and Erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sector are executed and
will modify the sector contents. (Default value).
C
D
AI10783
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
1
0
High Impedance
Lock Register Out
Instruction
24-Bit Address
0
MSB
MSB
2
39
相關(guān)PDF資料
PDF描述
M25PE80-VMW6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMW6 4 Mbit Uniform Sector, Serial Flash Memory
M25PXX 4 Mbit Uniform Sector, Serial Flash Memory
M27128AF6 NMOS 16K 2K x 8 UV EPROM
M27128A-1F6 NMOS 16K 2K x 8 UV EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE80-VMW6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
M25PE80-VMW6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMW6TP 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PF32-VMW6G 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays
M25PF32-VMW6TG 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*