- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358974 > M27512-2F1 (意法半導(dǎo)體) NMOS 512K 64K x 8 UV EPROM PDF資料下載
參數(shù)資料
| 型號： | M27512-2F1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 512K 64K x 8 UV EPROM |
| 中文描述： | NMOS管為512k 64KX8的紫外線存儲器 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 90K |
| 代理商： | M27512-2F1 |
1/11
NOT FOR NEW DESIGN
November 2000
This is information on a product still in production but not recommended for new designs.
M27512
NMOS 512 Kbit (64Kb x 8) UV EPROM
I
FAST ACCESS TIME: 200ns
I
EXTENDED TEMPERATURE RANGE
I
SINGLE 5V SUPPLY VOLTAGE
I
LOW STANDBY CURRENT: 40mA max
I
TTL COMPATIBLE DURING READ and
PROGRAM
I
FAST PROGRAMMING ALGORITHM
I
ELECTRONIC SIGNATURE
I
PROGRAMMING VOLTAGE: 12V
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new pat-
tern can then be written to the device by following
the programming procedure.
Figure 1. Logic Diagram
AI00765B
16
Q0-Q7
VCC
M27512
GVPP
VSS
8
A0-A15
E
1
28
FDIP28W (F)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27512-20F1 | NMOS 512K 64K x 8 UV EPROM |
| M27512-2F6 | NMOS 512K 64K x 8 UV EPROM |
| M27512-3F1 | NMOS 512K 64K x 8 UV EPROM |
| M27512-3F6 | NMOS 512K 64K x 8 UV EPROM |
| M27512-25F6 | NMOS 512K 64K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27512-2F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M275122FI | 制造商:ST MICRO 功能描述:New |
| M27512-30F1 | 功能描述:電可擦除可編程只讀存儲器 DISC BY SGS 11/95 RoHS:否 制造商:STMicroelectronics 存儲容量: 組織: 數(shù)據(jù)保留: 最大時(shí)鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: |
| M27512-3F1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512-3F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。