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參數(shù)資料
| 型號： | M27512-2F6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 512K 64K x 8 UV EPROM |
| 中文描述： | NMOS管為512k 64KX8的紫外線存儲器 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 90K |
| 代理商： | M27512-2F6 |
A1
A0
Q0
Q1
Q2
A7
A6
A5
A4
A3
A2
A13
A8
A9
A11
GVPP
A10
E
Q7
Q6
A14
Q5
Q4
Q3
VSS
A12
A15
VCC
AI00766
M27512
8
9
10
11
12
13
14
1
2
3
4
5
6
7
16
15
28
27
26
25
24
23
22
21
20
19
18
17
Figure 2. DIP Pin Connections
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
Grade 1
Grade 6
0 to 70
–40 to 85
°
C
T
BIAS
Temperature Under Bias
Grade 1
Grade 6
–10 to 80
–50 to 95
°
C
T
STG
Storage Temperature
–65 to 125
°
C
V
IO
Input or Output Voltages
–0.6 to 6.5
V
V
CC
Supply Voltage
–0.6 to 6.5
V
V
A9
A9 Voltage
–0.6 to 13.5
V
V
PP
Program Supply
–0.6 to 14
V
Note:
Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause
permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those
indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods
may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.
Table 2. Absolute Maximum Ratings
DEVICE OPERATION
The six modes of operations of the M27512 are
listed in the Operating Modes table. A single 5V
power supply is required in the read mode. All
inputs are TTL levels except for GV
PP
and 12V on
A9 for Electronic Signature.
Read Mode
The M27512 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, inde-
pendent of device selection. Assuming that the
addresses are stable, address access time (t
AVQV
)
is equal to the delay from E to output (t
ELQV
). Data
is available at the outputs after delay of t
GLQV
from
the falling edge of G, assuming that E has been low
and the addresses have been stable for at least
t
AVQV
-t
GLQV
.
Standby Mode
The M27512 has a standby mode which reduces
the maximum active power current from 125mA to
40mA. The M27512 is placed in the standby mode
by applying a TTL high signal to the E input. When
in the standby mode, the outputs are in a high
impedance state, independent of the GV
PP
input.
Two Line Output Control
Because EPROMs are usually used in larger mem-
ory arrays, the product features a 2 line control
function which accommodates the use of multiple
memory connection. The two line control function
allows :
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
M27512
2/11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M275122FI | 制造商:ST MICRO 功能描述:New |
| M27512-30F1 | 功能描述:電可擦除可編程只讀存儲器 DISC BY SGS 11/95 RoHS:否 制造商:STMicroelectronics 存儲容量: 組織: 數(shù)據(jù)保留: 最大時鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: |
| M27512-3F1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512-3F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512F1 | 功能描述:可擦除可編程ROM DISC BY STM 11/01 DIP-28 64KX8 250NS RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
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