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參數(shù)資料
| 型號(hào)： | M27512-2F6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 512K 64K x 8 UV EPROM |
| 中文描述： | NMOS管為512k 64KX8的紫外線存儲(chǔ)器 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 90K |
| 代理商： | M27512-2F6 |
Electronic Signature
The Electronic Signature mode allows the reading
out of a binary code from an EPROM that will
identify its manufacturer and type. This mode is
intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
This mode is functional in the 25
°
C
±
5
°
C ambient
temperature range that is required when program-
ming the M27512. To activate this mode, the pro-
gramming equipment must force 11.5V to 12.5V on
address line A9 of the M27512. Two identifier bytes
may then be sequenced from the device outputs by
toggling address line A0 from V
IL
to V
IH
. All other
address lines must be held at V
IL
during Electronic
Signature mode, except for A14 and A15 which
should be high. Byte 0 (A0 = V
IL
) represents the
manufacturer code and byte 1 (A0 = V
IH
) the device
identifier code.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristic of the M27512 is such
that erasure begins when the cells are exposed to
light with wavelengths shorter than approximately
4000 . It should be noted that sunlight and some
type of fluorescent lamps have wavelengths in the
3000-4000 range. Research shows that constant
exposure to room level fluorescent lighting could
erase a typical M27512 in about 3 years, while it
would take approximately 1 week to cause erasure
when expose to direct sunlight. If the M27512 is to
be exposed to these types of lighting conditions for
extended periods of time, it is suggested that
opaque labels be put over the M27512 window to
prevent unintentional erasure. The recommended
erasure procedure for the M27512 is exposure to
short wave ultraviolet light which has wavelength
2537 .
The integrated dose (i.e. UV intensity x exposure
time) for erasure should be a minimum of 15
W-sec/cm
2
. The erasure time with this dosage is
approximately 15 to 20 minutes using an ultraviolet
lamp with 12000
μ
W/cm
2
power rating. The
M27512 should be placed within 2.5 cm (1 inch) of
the lamp tubes during the erasure. Some lamps
have a filter on their tubes which should be re-
moved before erasure.
Speed and V
CC
Tolerance
-2
200 ns, 5V
±
5%
blank
250 ns, 5V
±
5%
-3
300 ns, 5V
±
5%
-20
200 ns, 5V
±
10%
-25
250 ns, 5V
±
10%
Package
FDIP28W
F
Temperature Range
1
0 to 70
°
C
6
–40 to 85
°
C
Example: M27512 -2 F 1
ORDERING INFORMATION SCHEME
For a list of available options (Speed, V
CC
Tolerance, Package, etc) refer to the current Memory Shortform
catalogue.
For further inform ation on any aspect of this device, please cont act STMicroelectronics Sales Office nearest
to you.
M27512
9/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27512-3F1 | NMOS 512K 64K x 8 UV EPROM |
| M27512-3F6 | NMOS 512K 64K x 8 UV EPROM |
| M27512-25F6 | NMOS 512K 64K x 8 UV EPROM |
| M27512-25F1 | NMOS 512K 64K x 8 UV EPROM |
| M27512-20F6 | NMOS 512K 64K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M275122FI | 制造商:ST MICRO 功能描述:New |
| M27512-30F1 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 DISC BY SGS 11/95 RoHS:否 制造商:STMicroelectronics 存儲(chǔ)容量: 組織: 數(shù)據(jù)保留: 最大時(shí)鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: |
| M27512-3F1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512-3F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512F1 | 功能描述:可擦除可編程ROM DISC BY STM 11/01 DIP-28 64KX8 250NS RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
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