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參數(shù)資料
| 型號(hào)： | M27512-2F6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 512K 64K x 8 UV EPROM |
| 中文描述： | NMOS管為512k 64KX8的紫外線存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大小： | 90K |
| 代理商： | M27512-2F6 |
AI00774B
n = 1
Last
Addr
VERIFY
E = 1ms Pulse
++n
> 25
++ Addr
VCC = 6V, VPP = 12.5V
FAIL
CHECK ALL BYTES
VCC = 5V, VPP = 5V
YES
NO
YES
NO
YES
NO
E = 3ms Pulse by n
Figure 8. Fast Programming Flowchart
AI00773B
n = 0
Last
Addr
VERIFY
E = 500
μ
s Pulse
++n
= 25
++ Addr
VCC = 6.25V, VPP = 12.75V
FAIL
CHECK ALL BYTES
VCC = 5V, VPP = 5V
YES
NO
YES
NO
YES
NO
SET MARGIN MODE
RESET MARGIN MODE
Figure 9. PRESTO Programming Flowchart
DEVICE OPERATION
(cont’d)
The Fast Programming Algorithm utilizes two differ-
ent pulse types : initial and overprogram. The du-
ration of the initial E pulse(s) is 1ms, which will then
be followed by a longer overprogram pulse of length
3ms by n (n is an iteration counter and is equal to
the number of the initial one millisecond pulses
applied to a particular M27512 location), before a
correct verify occurs. Up to 25 one-millisecond
pulses per byte are provided for before the over
program pulse is applied.
The entire sequence of program pulses is per-
formed at V
CC
= 6V and GV
PP
= 12.5V (byte verifi-
cations at V
CC
= 6V and GV
PP
= V
IL
). When the Fast
Programming cycle has been completed, all bytes
should be compared to the original data with
V
CC
= 5V.
PRESTO Programming Algorithm
PRESTO Programming Algorithm allows to pro-
gram the whole array with a guaranted margin, in
a typical time of less than 50 seconds (to be com-
pared with 283 seconds for the Fast algorithm).
This can be achieved with the STMicroelectronics
M27512 due to several design innovations de-
scribed in the next paragraph that improves pro-
gramming efficiency and brings adequate margin
for reliability. Before starting the programming the
internal MARGIN MODE circuit is set in order to
guarantee that each cell is programmed with
enough margin.
Then a sequence of 500
μ
s program pulses are
applied to each byte until a correct verify occurs.
No overprogram pulses are applied since the verify
in MARGIN MODE provides the necessary margin
to each programmed cell.
Program Inhibit
Programming of multiple M27512s in parallel with
different data is also easily accomplished. Except
for E, all like inputs (including GV
PP
) of the parallel
M27512 may be common. A TTL low level pulse
applied to a M27512’s E input, with GV
pp
at 12.5V,
will program that M27512. A high level E input
inhibits the other M27512s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correctly
programmed. The verify is accomplished with GV
pp
and E at V
IL
. Data should be verified t
DV
after the
falling edge of E.
M27512
8/11
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PDF描述 |
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| M27512-25F6 | NMOS 512K 64K x 8 UV EPROM |
| M27512-25F1 | NMOS 512K 64K x 8 UV EPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M275122FI | 制造商:ST MICRO 功能描述:New |
| M27512-30F1 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 DISC BY SGS 11/95 RoHS:否 制造商:STMicroelectronics 存儲(chǔ)容量: 組織: 數(shù)據(jù)保留: 最大時(shí)鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: |
| M27512-3F1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512-3F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512F1 | 功能描述:可擦除可編程ROM DISC BY STM 11/01 DIP-28 64KX8 250NS RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
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