參數(shù)資料
型號: M28C16-20NS6
廠商: 意法半導體
英文描述: 16 Kbit 2Kb x8 Parallel EEPROM
中文描述: 16千位2KB的x8并行的EEPROM
文件頁數(shù): 9/19頁
文件大小: 134K
代理商: M28C16-20NS6
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
AVWL
t
AS
Address Validto Write Enable Low
E = V
IL
, G = V
IH
0
ns
t
AVEL
t
AS
Address Validto Chip Enable Low
G = V
IH
, W = V
IL
0
ns
t
ELWL
t
CES
Chip Enable Low to Write Enable Low
G = V
IH
0
ns
t
GHWL
t
OES
Output EnableHigh to Write Enable
Low
E = V
IL
0
ns
t
GHEL
t
OES
Output EnableHigh to Chip Enable Low
W = V
IL
0
ns
t
WLEL
t
WES
Write Enable Low to Chip Enable Low
G = V
IH
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
100
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
100
ns
t
WLDV
t
DV
Write Enable Low to Input Valid
E = V
IL
, G = V
IH
1
μ
s
t
ELDV
t
DV
Chip Enable Low to Input Valid
G = V
IH
, W = V
IL
1
μ
s
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
100
ns
t
WHEH
t
CEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable
Low
0
ns
t
EHGL
t
OEH
Chip Enable High to OutputEnable Low
0
ns
t
EHWH
t
WEH
Chip Enable High to WriteEnable High
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
200
ns
t
WLWH
tWP
Write Enable Low to Write Enable High
100
ns
t
WHWH
t
BLC
Byte Load Repeat Cycle Time
0.2
30
μ
s
t
WHRH
t
WC
Write Cycle Time
5
ms
t
WHRL
t
DB
Write Enable High to Ready/Busy Low
Note 1
100
ns
t
EHRL
t
DB
Chip Enable High to Ready/Busy Low
Note 1
100
ns
t
DVWH
t
DS
Data Valid before Write Enable High
50
ns
t
DVEH
t
DS
Data Valid before Chip Enable High
50
ns
Note
: 1.With a 3.3 k
external pull-up resistor.
Table 12. Write Mode AC Characteristicsfor M28C16Aand M28C17A
(T
A
= –40to 85
°
C, V
CC
=
4.5V to 5.5V)
9/19
M28C16A, M28C17A
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