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參數(shù)資料
| 型號(hào)： | M28W320EBT10N1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 32兆位（處理器x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 41/45頁 |
| 文件大?。?/td> | 299K |
| 代理商： | M28W320EBT10N1 |
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M28W320EBT, M28W320EBB
SUMMARY DESCRIPTION
The M28W320EB is a 32 Mbit (2 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at the block level and programmed in-system
on a Word-by-Word basis. These operations can
be performed using a single low voltage (2.7 to
3.6V) supply. VDDQ allows to drive the I/O pin
down to 1.65V. An optional 12V VPP power supply
is provided to speed up customer programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W320EB has an array of 71
blocks: 8 Parameter Blocks of 4 KWord and 63
Main Blocks of 32 KWord. M28W320EBT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W320EBB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 5, Block Ad-
dresses.
Parameter blocks 0 and 1 can be protected from
accidental programming or erasure. Each block
can be erased separately. Erase can be suspend-
ed in order to perform either read or program in
any other block and then resumed. Program can
be suspended to read data in any other block and
then resumed. Each block can be programmed
and erased over 100,000 cycles.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP48 (10 X 20mm),
and TFBGA47 (6.39 x 6.37mm, 0.75mm pitch)
packages and is supplied with all the bits erased
(set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A20
Address Inputs
DQ0-DQ15
Data Input/Output
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset
WP
Write Protect
VDD
Core Power Supply
VDDQ
Power Supply for
Input/Output
VPP
Optional Supply Voltage for
Fast Program & Erase
VSS
Ground
AI05514
21
A0-A20
W
DQ0-DQ15
VDD
M28W320EBT
M28W320EBB
E
VSS
16
G
RP
WP
VDDQ VPP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28W320EBT10N1T | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W320EBT10N6 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W320EBT10N6T | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W320EBT10ZB1 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W320EBT10ZB1T | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28W320EBT70ZB6T | 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W320ECB70ZB6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 70NS 47TFBGA - Trays |
| M28W320ECB70ZB6T | 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W320ECT70ZB6 | 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W320ECT70ZB6T | 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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