參數(shù)資料
型號(hào): M28W320EBT10N1
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 32兆位(處理器x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 5/45頁(yè)
文件大?。?/td> 299K
代理商: M28W320EBT10N1
13/45
M28W320EBT, M28W320EBB
ditionally, if the suspend operation was Erase then
the Program, Double Word Program and Quadru-
ple Word Program commands will also be accept-
ed. Only the blocks not being erased may be read
or programmed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to VIH. Program/Erase is aborted if
Reset turns to VIL.
See Appendix C, Figure 19, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
21, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister.
See Appendix C, Figure 19, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 21, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Resume com-
mand.
Block Protection
Two parameter/lockable blocks (blocks #0 and #1)
can be protected against Program or Erase oper-
ations. Unprotected blocks can be programmed or
erased.
To protect the two lockable blocks set Write Pro-
tect to VIL. When VPP is below VPPLK all blocks are
protected. Any attempt to Program or Erase pro-
tected blocks will abort, the data in the block will
not be changed and the Status Register outputs
the error.
Table 6, Memory Blocks Protection Truth Table,
defines the protection methods.
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