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參數(shù)資料
| 型號： | M28W640ECT70ZB6T |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | 6.39 X 10.50 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件頁數(shù)： | 45/54頁 |
| 文件大?。?/td> | 957K |
| 代理商： | M28W640ECT70ZB6T |
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M28W640ECT, M28W640ECB
SUMMARY DESCRIPTION
The M28W640EC is a 64 Mbit (4 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at block level and programmed in-system on
a Word-by-Word basis using a 2.7V to 3.6V VDD
supply for the circuitry and a 1.65V to 3.6V VDDQ
supply for the Input/Output pins. An optional 12V
VPP power supply is provided to speed up custom-
er programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W640EC has an array of 135
blocks: 8 Parameter Blocks of 4 KWord and 127
Main Blocks of 32 KWord. M28W640ECT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W640ECB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 5, Block Ad-
dresses.
The M28W640EC features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When VPP ≤ VPPLK all blocks are protected against
program or erase. All blocks are locked at Power
Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a 192 bit Protection Register
to increase the protection of a system design. The
Protection Register is divided into a 64 bit segment
and a 128 bit segment. The 64 bit segment con-
tains a unique device number written by ST, while
the second one is one-time-programmable by the
user. The user programmable segment can be
permanently protected. Figure 6, shows the Pro-
tection Register Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP48 (12 X 20mm)
and TFBGA48 (6.39 x 10.5mm, 0.75mm pitch)
packages and is supplied with all the bits erased
(set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A21
Address Inputs
DQ0-DQ15
Data Input/Output
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset
WP
Write Protect
VDD
Core Power Supply
VDDQ
Power Supply for
Input/Output
VPP
Optional Supply Voltage for
Fast Program & Erase
VSS
Ground
NC
Not Connected Internally
AI04378b
22
A0-A21
W
DQ0-DQ15
VDD
M28W640ECT
M28W640ECB
E
VSS
16
G
RP
WP
VDDQ VPP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28W640ECT85N1 | 4M X 16 FLASH 3V PROM, 85 ns, PDSO48 |
| M28W640ECT85ZB1T | 4M X 16 FLASH 3V PROM, 85 ns, PBGA48 |
| M28W640ECT70ZB1E | 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| M28W640ECT85N1E | 4M X 16 FLASH 3V PROM, 85 ns, PDSO48 |
| M29W040B70N1E | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28W640FCB70N6 | 制造商:STMicroelectronics 功能描述: |
| M28W640FCB70N6E | 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W640FCB70N6F | 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W640FCB70ZB6E | 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W640FCB70ZB6F | 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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