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參數(shù)資料
| 型號： | M28W800B100N1T |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 38/40頁 |
| 文件大?。?/td> | 284K |
| 代理商： | M28W800B100N1T |
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M28W800T, M28W800B
INSTRUCTIONS AND COMMANDS
Twelve instructions are available (see Tables 7
and 8) to perform Read Memory Array, Read Sta-
tus Register, Read Electronic Signature, CFI Que-
ry,
Erase,
Program,
Clear
Status
Register,
Program/Erase Suspend, Program/Erase
Re-
sume, Read OTP, Program OTP. Status Register
output may be read at any time, during program-
ming or erase, to monitor the progress of the oper-
ation.
An internal Command Interface (C.I.) decodes the
instructions while an internal Program/Erase Con-
troller (P/E.C.) handles all timing and verifies the
correct execution of the Program and Erase in-
structions. P/E.C. provides a Status Register
whose bits indicate operation and exit status of the
internal algorithms.
The Command Interface is reset to Read Array
when power is first applied, when exiting from
power down or whenever VDD is lower than VLKO.
Command sequence must be followed exactly.
Any invalid combination of commands will reset
the device to Read Array.
Read (RD)
The Read instruction consists of one write cycle
(refer to Device Operations section) giving the
command FFh. Next read operations will read the
addressed location and output the data. When a
device reset occurs, the memory is in Read Array
as default.
Read Status Register (RSR)
The Status Register indicates when a program or
erase operation is complete and the success or
failure of operation itself. Issue a Read Status
Register Instruction (70h) to read the Status Reg-
ister content.
The Read Status Register instruction may be is-
sued at any time, also when a Program/Erase op-
eration is ongoing. The following Read operations
output the content of the Status Register. It is
latched on the falling edge of E or G signals, and
can be read until E or G returns to VIH. Either E or
G must be toggled to update the latched data. Ad-
ditionally, any read attempt during program or
erase operation will automatically output the con-
tent of the Status Register.
Read Electronic Signature (RSIG)
Two codes identifying the manufacturer and the
device can be read from the memory allowing pro-
gramming equipment or applications to automati-
cally match their interface to the characteristics of
the M28W800. Manufacturer and Device Code
(Electronic Signature) can be read by a Read
Electronic Signature Instruction.
It uses 3 operations: a write operation issues the
command 90h; it is followed by two read opera-
tions to output the manufacturer and device codes.
The Manufacturer Code, 20h, is output when the
address line A0 is at VIL. The Device Code is
8892h (top version) or 8893h (bottom version) and
is output when A0 is at VIH (refer to table 4). Other
Address inputs are ignored. The codes are output
on DQ0-DQ15. Return to Read Mode is achieved
writing the Read Array command.
CFI Query (RCFI)
The Common Flash Interface Query mode is en-
tered by writing 98h. Next read operations will read
the CFI data. Write a read instruction to return to
Read mode (refer to the Common Flash Interface
section).
Read OTP Area (RDO)
The Read OTP Area (RDO) instruction is a single
write cycle instruction: as the command 80h is
written the device will be driven in Read OTP
mode. Any successive read bus cycle will output
the addressed OTP word. To return in the Read
Memory Array mode write the Read command
FFh.
Table 7. Commands
Hex Code
Command
00h, 01h, 60h,
2Fh, C0h
Invalid/Reserved
10h
Alternative Program Set-up
20h
Erase Set-up
30h
OTP Program Set-up
40h
Program Set-up
50h
Clear Status Register
70h
Read Status Register
80h
OTP Read
90h
Read Electronic Signature
98h
CFI Query
B0h
Program/Erase Suspend
D0h
Program/Erase Resume, or
Erase Confirm
FFh
Read Array
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28W800BB90N1 | 功能描述:閃存 8M (512Kx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W800BB90ZB6T | 功能描述:閃存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W800BT100N6T | 功能描述:閃存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W800BT90N6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 512KX16 90NS 48TSOP - Trays |
| M28W800CB90N1 | 功能描述:閃存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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