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參數(shù)資料
| 型號(hào)： | M29F200BT90N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動(dòng)座單電源閃存 |
| 文件頁數(shù)： | 16/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | M29F200BT90N6T |
M29F200BT, M29F200BB
16/22
Table 13. Write AC Characteristics, Chip Enable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
M29F200B
Unit
45
55
70 / 90
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
45
55
70
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
Min
0
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
Min
40
40
45
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
Min
25
25
30
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
Min
0
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
Min
0
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
Min
20
20
20
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
Min
0
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
Min
40
40
45
ns
t
GHEL
Output Enable High Chip Enable Low
Min
0
0
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
Min
0
0
0
ns
t
EHRL(1)
t
BUSY
Program/Erase Valid to RB Low
Max
30
30
30
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
Min
50
50
50
μ
s
Figure 9. Write AC Waveforms, Chip Enable Controlled
AI01992
E
G
W
A0-A16/
A–1
DQ0-DQ7/
DQ8-DQ15
VALID
VALID
VCC
tVCHWL
tEHWH
tEHEL
tWLEL
tAVEL
tEHGL
tELAX
tEHDX
tAVAV
tDVEH
tELEH
tGHEL
RB
tEHRL
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