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參數(shù)資料
| 型號(hào)： | M29F200BT90N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動(dòng)座單電源閃存 |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | M29F200BT90N6T |
M29F200BT, M29F200BB
14/22
Figure 7. Read Mode AC Waveforms
AI02915
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A16/
A–1
G
DQ0-DQ7/
DQ8-DQ15
E
tELQV
tEHQX
tGHQZ
VALID
tBHQV
tELBL/tELBH
tBLQZ
BYTE
Table 11. ReadAC Characteristics
(TA = 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M29F200B
Unit
45
55
70 / 90
t
AVAV
t
RC
Address Validto Next Address Valid
E = V
IL
,
G = V
IL
Min
45
55
70
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
45
55
70
ns
t
ELQX(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
Min
0
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
45
55
70
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
Min
0
0
0
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
25
30
30
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
15
18
20
ns
t
GHQZ(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
15
18
20
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min
0
0
0
ns
t
ELBL
t
ELBH
t
ELFL
t
ELFH
Chip Enable to BYTE Low or High
Max
5
5
5
ns
t
BLQZ
t
FLQZ
BYTE Low to Output Hi-Z
Max
15
15
20
ns
t
BHQV
t
FHQV
BYTE High to Output Valid
Max
30
30
30
ns
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