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參數(shù)資料
| 型號： | M29F400BT45M1E |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 256K X 16 FLASH 5V PROM, 45 ns, PDSO44 |
| 封裝： | 0.525 INCH, LEAD FREE, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 5/40頁 |
| 文件大小： | 371K |
| 代理商： | M29F400BT45M1E |
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M29F400BT, M29F400BB
Bus operations
3
Bus operations
There are five standard bus operations that control the device. These are Bus Read, Bus
Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write
Enable are ignored by the memory and do not affect bus operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write
AC Waveforms, and Table 12., Read AC Characteristics, for details of when the output
becomes valid.
3.2
Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,
during the whole Bus Write operation. See Figure 9. and Figure 10., Write AC Waveforms,
3.3
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.
3.4
Standby
When Chip Enable is High, VIH, the Data Inputs/Outputs pins are placed in the high-
impedance state and the Supply Current is reduced to the Standby level.
When Chip Enable is at VIH the Supply Current is reduced to the TTL Standby Supply
Current, ICC2. To further reduce the Supply Current to the CMOS Standby Supply Current,
11., DC Characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, ICC4, for Program or Erase operations until the operation completes.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| M29F400BT45N1 | 功能描述:閃存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BT55M1 | 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BT55N1 | 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BT55N6E | 功能描述:閃存 4 Mbit Sngl RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BT70M1 | 功能描述:閃存 512Kx8 or 256Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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