參數(shù)資料
型號(hào)： M29F400BT45M1E
廠(chǎng)商： STMICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 256K X 16 FLASH 5V PROM, 45 ns, PDSO44
封裝： 0.525 INCH, LEAD FREE, PLASTIC, SOP-44
文件頁(yè)數(shù)： 6/40頁(yè)
文件大?。?/td> 371K
代理商： M29F400BT45M1E
Bus operations
M29F400BT, M29F400BB
3.5
Automatic Standby
If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 150ns or
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the CMOS Standby Supply Current, ICC3. The Data Inputs/Outputs will still output data if a
Bus Read operation is in progress.
3.6
Special bus operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.6.1
Electronic Signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 2.
and Table 3., Bus Operations.
3.6.2
Block Protection and Blocks Unprotection
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. For further information refer to
Application Note AN1122, Applying Protection and Unprotection to M29 Series Flash.
Table 2.
Bus operations, BYTE = VIL
(1)
1.
X = VIL or VIH.
Operation
E
G
W
Address Inputs
DQ15A–1, A0-A17
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIH Cell Address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL Command Address
Hi-Z
Data Input
Output Disable
X
VIH
VIH X
Hi-Z
Standby
VIH
X
Hi-Z
Read Manufacturer
Code
VIL
VIH
A0 = VIL, A1 = VIL, A9
= VID, Others VIL or VIH
Hi-Z
20h
Read Device Code
VIL
VIH
A0 = VIH, A1 = VIL, A9
= VID, Others VIL or VIH
Hi-Z
D5h (M29F400BT)
D6h (M29F400BB)
相關(guān)PDF資料
PDF描述
M29F400FB55M3F2 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
M29F400FB5AN6F2 256K X 16 FLASH 5V PROM, 55 ns, PDSO48
M29W800B-120N5RTR 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
M29W800T-150M6 1M X 8 FLASH 3V PROM, 150 ns, PDSO44
M29W800FB9N3F 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F400BT45N1 功能描述:閃存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT55M1 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT55N1 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT55N6E 功能描述:閃存 4 Mbit Sngl RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT70M1 功能描述:閃存 512Kx8 or 256Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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