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參數(shù)資料
| 型號： | M29W008EB70N1E |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 8兆（1兆× 8，引導塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 14/43頁 |
| 文件大?。?/td> | 282K |
| 代理商： | M29W008EB70N1E |
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4 Command interface
M29W008ET, M29W008EB
14/43
4
Command interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a valid
sequence of Bus Write operations will result in the memory returning to Read mode. The long
command sequences are imposed to maximize data security. All commands start with two
coded cycles which unlock the Command Interface.
Seven commands are available: Read/Reset, Auto Select (to read the Electronic Signature and
the Block Protection Status),
Program, Block Erase, Chip Erase, Erase Suspend and Erase
Resume (see
Table 3: Commands
).
4.1
Read/Reset command
The Read/Reset command returns the memory to its Read mode where it behaves like a ROM
or EPROM, unless otherwise stated. It also resets the errors in the Status Register. Either one
or three Bus Write operations can be used to issue the Read/Reset command.
The Read/Reset Command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to read mode. Once the program or erase
operation has started the Read/Reset command is no longer accepted. The Read/Reset
command will not abort an Erase operation when issued while in Erase Suspend.
4.2
Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code and the
Block Protection Status. Three consecutive Bus Write operations are required to issue the Auto
Select command. Once the Auto Select command is issued the memory remains in Auto Select
mode until another command is issued.
From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits may be set to either VIL or VIH.
The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The
other address bits may be set to either VIL or VIH.
The Block Protection Status of each block can be read using a Bus Read operation with A0 =
VIL, A1 = VIH, and A13-A19 specifying the address of the block. The other address bits may be
set to either VIL or VIH. If the addressed block is protected then 01h is output on Data Inputs/
Outputs DQ0-DQ7, otherwise 00h is output.
4.3
Program command
The Program command can be used to program a value to one address in the memory array at
a time. The command requires four Bus Write operations, the final write operation latches the
address and data and starts the Program/Erase Controller.
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W008EB70N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
| M29W008EB70N6E | 制造商:Micron Technology Inc 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29W008 制造商:Numonyx Memory Solutions 功能描述:IC, FLASH, 8MBIT, 70NS, TSOP-40, Memory Type:Flash - Boot Block, Memory Size:8Mb |
| M29W008EB70N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
| M29W008EB90N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
| M29W008EB90N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
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