參數(shù)資料
型號： M29W008EB70N1E
廠商： 意法半導體
英文描述： 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述： 8兆（1兆× 8，引導塊）3V電源快閃記憶體
文件頁數(shù)： 27/43頁
文件大?。?/td> 282K
代理商： M29W008EB70N1E
M29W008ET, M29W008EB
7 DC and AC characteristics
27/43
Figure 10. Read Mode AC Waveforms
Table 10.
Read AC Characteristics
Symbol
Alt
Parameter
Test Condition
M29W008E
Unit
70
90
t
AVAV(1)
1.
Address are latched on the falling edge of W, Data is latched on the rising edge of W.
t
RC
Address Valid to Next Address Valid
E = V
IL
,
G = V
IL
Min
70
90
ns
t
AVQV(1)
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
70
90
ns
t
ELQX(2)
2.
Sampled only, not 100% tested.
t
LZ
Chip Enable Low to Output Transition
G = V
IL
Min
0
0
ns
t
ELQV(1)
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
70
90
ns
t
GLQX(2)
t
OLZ
Output Enable Low to Output Transition
E = V
IL
Min
0
0
ns
t
GLQV(1)
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
30
35
ns
t
EHQZ(2)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
25
30
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
25
30
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or Address
Transition to Output Transition
Min
0
0
ns
AI09446
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A19
G
DQ0-DQ7
E
tELQV
tEHQX
tGHQZ
VALID
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008EB70N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008EB70N6E 制造商:Micron Technology Inc 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29W008 制造商:Numonyx Memory Solutions 功能描述:IC, FLASH, 8MBIT, 70NS, TSOP-40, Memory Type:Flash - Boot Block, Memory Size:8Mb
M29W008EB70N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008EB90N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008EB90N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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