參數(shù)資料
型號(hào)： M29W008EB70N1E
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述： 8兆（1兆× 8，引導(dǎo)塊）3V電源快閃記憶體
文件頁(yè)數(shù)： 19/43頁(yè)
文件大?。?/td> 282K
代理商： M29W008EB70N1E
M29W008ET, M29W008EB
4 Command interface
19/43
Table 4.
Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Min
Typ
(1)(2)
1.
Typical values measured at room temperature and nominal voltages.
2.
Sampled, but not 100% tested.
Max
(2)
Unit
Chip Erase
12
60
(3)
3.
Maximum value measured at worst case conditions for both temperature and V
CC
after 100,00 program/erase cycles.
Maximum value measured at worst case conditions for both temperature and V
CC
.
s
Block Erase (64 KBytes)
0.8
6
(4)
4.
s
Erase Suspend Latency Time
15
25
(3)
μs
Program (Byte)
10
200
(3)
μs
Chip Program (Byte by Byte)
12
60
(3)
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008EB70N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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M29W008EB70N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008EB90N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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