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參數(shù)資料
| 型號： | M29W400DB45ZA1E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 4兆位（512KB的x8或256Kb的x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | M29W400DB45ZA1E |
3/22
M29W400BT, M29W400BB
Chip Enable, Output Enableand Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm)
and SO44 packages and it is supplied with all the
bits erased (set to ’1’).
The blocks in the memory are asymmetrically ar-
ranged, seeTables 3 and 4, Block Addresses.The
first or last 64 Kbytes have been divided into four
additional blocks. The 16 Kbyte Boot Block can be
used for small initialization code to start the micro-
processor, the two 8 Kbyte Parameter Blocks can
be used for parameter storage and the remaining
32K is a small Main Block where the application
may be stored.
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Referalso to the STMicroelectronics SUREProgram andother relevant qual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°
C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO(2)
Input or Output Voltage
–0.6 to 4
V
V
CC
Supply Voltage
–0.6 to 4
V
V
ID
Identification Voltage
–0.6 to 13.5
V
Table 3. Top Boot Block Addresses
M29W400BT
Size
(Kbytes)
10
16
7C000h-7FFFFh
9
8
7A000h-7BFFFh
8
8
78000h-79FFFh
7
32
70000h-77FFFh
6
64
60000h-6FFFFh
5
64
50000h-5FFFFh
4
64
40000h-4FFFFh
3
64
30000h-3FFFFh
2
64
20000h-2FFFFh
1
64
10000h-1FFFFh
0
64
00000h-0FFFFh
#
Address Range
(x8)
Address Range
(x16)
3E000h-3FFFFh
3D000h-3DFFFh
3C000h-3CFFFh
38000h-3BFFFh
30000h-37FFFh
28000h-2FFFFh
20000h-27FFFh
18000h-1FFFFh
10000h-17FFFh
08000h-0FFFFh
00000h-07FFFh
Table 4. Bottom Boot Block Addresses
M29W400BB
Size
(Kbytes)
(x8)
10
64
70000h-7FFFFh
9
64
60000h-6FFFFh
8
64
50000h-5FFFFh
7
64
40000h-4FFFFh
6
64
30000h-3FFFFh
5
64
20000h-2FFFFh
4
64
10000h-1FFFFh
3
32
08000h-0FFFFh
2
8
06000h-07FFFh
1
8
04000h-05FFFh
0
16
00000h-03FFFh
#
Address Range
Address Range
(x16)
38000h-3FFFFh
30000h-37FFFh
28000h-2FFFFh
20000h-27FFFh
18000h-1FFFFh
10000h-17FFFh
08000h-0FFFFh
04000h-07FFFh
03000h-03FFFh
02000h-02FFFh
00000h-01FFFh
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| M29W400DB45ZA1F | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45ZA1T | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45ZA6E | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45ZA6F | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45ZA6T | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W400DB45ZE6E | 功能描述:閃存 4 MBIT 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W400DB45ZE6E_NUD | 制造商:Micron Technology Inc 功能描述: |
| M29W400DB45ZE6F | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel |
| M29W400DB55N1 | 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W400DB55N3T | 功能描述:IC FLASH 4MBIT 55NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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