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參數(shù)資料
| 型號(hào)： | M29W640DT90N6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 64兆位和8Mb x8或4Mb的x16插槽，啟動(dòng)塊3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 5/49頁(yè) |
| 文件大?。?/td> | 945K |
| 代理商： | M29W640DT90N6E |
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M29W640DT, M29W640DB
SUMMARY DESCRIPTION
The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16)
non-volatile memory that can be read, erased and
reprogrammed. These operations can be per-
formed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Blocks can be
protected in units of 256 KByte (generally groups
of four 64 KByte blocks), to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
The device features an asymmetrical blocked ar-
chitecture. The device has an array of 135 blocks:
8 Parameters Blocks of 8 KBytes each (or
4 KWords each)
127 Main Blocks of 64 KBytes each (or
32 KWords each)
M29W640DT has the Parameter Blocks at the top
of the memory address space while the
M29W640DB locates the Parameter Blocks start-
ing from the bottom.
The M29W640D has an extra block, the Extended
Block, (of 32 KWords in x16 mode or of 64 KBytes
in x8 mode) that can be accessed using a dedicat-
ed command. The Extended Block can be protect-
ed and so is useful for storing security information.
However the protection is not reversible, once pro-
tected the protection cannot be undone.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The V
PP
/WP signal is used to enable faster pro-
gramming of the device, enabling double word
programming. If this signal is held at V
SS
, the boot
block, and its adjacent parameter block, are pro-
tected from program and erase operations.
The memory is delivered with all the bits erased (set
to 1).
■
■
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A21
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
(or DQ15)
Data Input/Output or Address Input
(or Data Input/Output)
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
V
CC
Supply Voltage
V
PP
/WP
Supply Voltage for Fast Program
(optional) or Write Protect
V
SS
Ground
NC
Not Connected Internally
AI05733
22
A0-A21
W
DQ0-DQ14
VCC
M29W640DT
M29W640DB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
VPP/WP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W640DT70N6F | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| M29W640DT90N6F | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| M29W640DB90N6F | 64 megabit and 8Mb X8 or 4Mb x16 slot, the boot block 3V supply flash memory |
| M29W640DT70ZA6E | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| M29W640DB70ZA6E | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W640DT90ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70N6E | 功能描述:閃存 64 Mbit Boot Block 3V STD 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70N6F | 功能描述:閃存 64MB RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70ZA6E | 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70ZA6F | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 70ns 48-Pin TFBGA T/R 制造商:Micron Technology Inc 功能描述:64MBIT PARALLEL NOR FLASH 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 70NS 48TFBGA - Tape and Reel |
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