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參數(shù)資料
| 型號： | M29W640DT90N6E |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 64兆位和8Mb x8或4Mb的x16插槽，啟動塊3V電源快閃記憶體 |
| 文件頁數(shù)： | 9/49頁 |
| 文件大?。?/td> | 945K |
| 代理商： | M29W640DT90N6E |
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M29W640DT, M29W640DB
pedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy be-
comes high-impedance. See
Table 15.
and
Figure
12., Reset/Block Temporary Unprotect AC Wave-
forms
, for more details.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE).
The
Byte/Word Organization Select pin is used to
switch between the x8 and x16 Bus modes of the
memory. When Byte/Word Organization Select is
Low, V
IL
, the memory is in x8 mode, when it is
High, V
IH
, the memory is in x16 mode.
V
CC
Supply Voltage (2.7V to 3.6V).
V
CC
vides the power supply for all operations (Read,
Program and Erase).
pro-
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. This prevents Bus Write operations from ac-
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memo-
ry contents being altered will be invalid.
A 0.1μF capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during Program and
Erase operations, I
CC3
.
V
SS
Ground.
V
SS
is the reference for all voltage
measurements. The device features two V
SS
pins
which must be both connected to the system
ground.
相關PDF資料 |
PDF描述 |
|---|---|
| M29W640DT70N6F | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| M29W640DT90N6F | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| M29W640DB90N6F | 64 megabit and 8Mb X8 or 4Mb x16 slot, the boot block 3V supply flash memory |
| M29W640DT70ZA6E | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| M29W640DB70ZA6E | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W640DT90ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70N6E | 功能描述:閃存 64 Mbit Boot Block 3V STD 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70N6F | 功能描述:閃存 64MB RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70ZA6E | 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70ZA6F | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 70ns 48-Pin TFBGA T/R 制造商:Micron Technology Inc 功能描述:64MBIT PARALLEL NOR FLASH 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 70NS 48TFBGA - Tape and Reel |
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