參數(shù)資料
型號： M30L0R8000T0ZAQF
廠商： 意法半導體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 39/83頁
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQF
39/83
M30L0R8000T0, M30L0R8000B0
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 18. Absolute Maximum Ratings
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
Symbol
Parameter
Value
Unit
Min
Max
T
A
Ambient Operating Temperature
–25
85
°C
T
BIAS
Temperature Under Bias
–25
85
°C
T
STG
Storage Temperature
–65
125
°C
T
LEAD
Lead Temperature During Soldering
(1)
°C
V
IO
Input or Output Voltage
–0.5
3.8
V
V
DD
Supply Voltage
–0.2
2.5
V
V
DDQ
Input/Output Supply Voltage
–0.2
2.5
V
V
PP
Program Voltage
–0.2
12.6
V
I
O
Output Short Circuit Current
100
mA
t
VPPH
Time for V
PP
at V
PPH
100
hours
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參數(shù)描述
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