參數(shù)資料
型號： M30L0R8000T0ZAQF
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 78/83頁
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQF
M30L0R8000T0, M30L0R8000B0
78/83
Note: 1. CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, P/E. C. = Program/Erase Con-
troller.
2. At Power-Up, all banks are in Read Array mode. Issuing a Read Array command to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. BEFP is allowed only when Status Register bit SR0 is set to ‘0’. BEFP is busy if Block Address is first BEFP Address. Any other
commands are treated as data.
Buffer
Program
in Erase
Suspend
Setup
Buffer Program Load 1 in Erase Suspend (give word count load (N-1)); if N=0 go to Buffer Program confirm. Else (N
not =0) go to Buffer Program Load 2
Buffer
Load 1
Buffer
Load 2
Buffer Program Load 2 in Erase Suspend (data load)
Buffer Program Confirm in Erase Suspend when count =0; Else Buffer Program Load 2 in Erase Suspend (note:
Buffer Program will fail at this point if any block address is different from the first address)
Buffer Program
Busy in Erase
Suspend
Confirm
Ready (error)
Ready (error)
Busy
Buffer Program Busy in Erase Suspend
Buffer
Program
Suspend in
Erase
Suspend
Buffer Program Busy in Erase
Suspend
Suspend
Buffer Program Suspend in Erase Suspend
Buffer Program
Busy in Erase
Suspend
Buffer Program Suspend in Erase Suspend
Lock/CR Setup
in Erase Suspend
Buffer
EFP
Erase Suspend (Lock Error)
Erase Suspend
Erase Suspend (Lock Error)
Setup
Busy
Ready (error)
BEFP Busy
BEFP Busy
(6)
Ready (error)
Current CI State
Command Input
Erase Confirm
P/E Resume,
Block Unlock
confirm,
BEFP Confirm
Read
Array
(2)
(FFh)
Program
Setup
(3,4)
(10/40h)
Buffer
Program
(3,4)
(E8h)
Block
Erase,
Setup
(3,4)
(20h)
BEFP
Setup
(80h)
(3,4)
(D0h)
Buffer
Program,
Program/
Erase
Suspend
(B0h)
Read
Status
Register
(70h)
Clear
status
Register
(5)
(50h)
Read
Electronic
Signature,
Read CFI
Query
(90h, 98h)
相關(guān)PDF資料
PDF描述
M30L0R8000T0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L40C 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
M30L40C-E3/4W 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
M30L45C-E3/4W 功能描述:肖特基二極管與整流器 45 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
M30LLASSM 制造商:Apex Tool Group 功能描述:Syringe; Manual Assemble Calibrated Syringe; 30 cc 制造商:Cooper Hand Tools / Weller 功能描述:CALIBRATED SYRINGE, 30CC; Dispenser Type:Syringe; Volume:30cc; Accessory Type:Calibrated Syringe
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*