參數(shù)資料
型號(hào): M34551E8
廠商: Mitsubishi Electric Corporation
英文描述: 4-BIT SINGLE-CHIP MICROCOMPUTER
中文描述: 4位單片機(jī)
文件頁數(shù): 66/68頁
文件大?。?/td> 698K
代理商: M34551E8
66
MITSUBISHI MICROCOMPUTERS
4551 Group
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for
INFRARED REMOTE CONTROL TRANSMITTER
Fig. 42 PROM memory map
Fig. 43 Flow of writing and test of the product shipped in
blank
(1) PROM mode
The built-in PROM version has a PROM mode in addition to
a normal operation mode. The PROM mode is used to write
to and read from the built-in PROM.
In the PROM mode, the programming adapter can be used
with a general-purpose PROM programmer to write to or read
from the built-in PROM as if it were M5M27C256K.
Programming adapter is listed in Table 21. Contact addresses
at the end of this book for the appropriate PROM programmer.
Writing and reading of built-in PROM
Programming voltage is 12.5 V. Write the program in the
PROM of the built-in PROM version as shown in Figure
42.
(2) Notes on handling
A high-voltage is used for writing. Take care that
overvoltage is not applied. Take care especially at turning
on the power.
For the One Time PROM version shipped in blank,
Mitsubishi Electric corp. does not perform PROM writing
test and screening in the assembly process and following
processes. In order to improve reliability after writing,
performing writing and test according to the flow shown in
Figure 43 before using is recommended.
(Products shipped in blank: PROM contents is not written in
factory when shipped)
Table 21 Programming adapter
Microcomputer
M34551E8-XXXFP, M34551E8FP
Programming adapter
PCA7414
Writing with PROM programmer
Screening (Leave at 150 °C for 40 hours) (Note)
Verify test with PROM programmer
Function test in target device
Since the screening temperature is higher
than storage temperature, never expose the
microcomputer to 150°C exceeding 100
hours.
Note:
Address
0000
16
1FFF
16
4000
16
5FFF
16
7FFF
16
1
1
1
D
4
D
3
D
2
D
1
D
0
High-order 5 bits
1
1
1
D
4
D
3
D
2
D
1
D
0
Low-order 5 bits
Set “FF
16
” to the shaded area.
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