- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359056 > M36DR432AD85ZA6T (意法半導(dǎo)體) 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號： | M36DR432AD85ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位的256Kb x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 1/52頁 |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432AD85ZA6T |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
1/52
February 2003
M36DR432AD
M36DR432BD
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory
and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
I
Multiple Memory Product
– 1 bank of 32 Mbit (2Mb x16) Flash Memory
– 1 bank of 4 Mbit (256Kb x16) SRAM
I
SUPPLY VOLTAGE
– V
DDF
= V
DDS
=1.65V to 2.2V
– V
PPF
= 12V for Fast Program (optional)
I
ACCESS TIMES: 85ns, 100ns, 120ns
I
LOW POWER CONSUMPTION
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code, M36DR432AD: 00A0h
– Bottom Device Code, M36DR432BD: 00A1h
FLASH MEMORY
I
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit, 28 Mbit
– Parameter Blocks (Top or Bottom location)
I
PROGRAMMING TIME
– 10μs by Word typical
– Double Word Program Option
I
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 Words
– Page Access: 35ns
– Random Access: 85ns, 100ns, 120ns
I
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
I
COMMON FLASH INTERFACE (CFI)
– 64 bit Unique Device Identifier
– 64 bit User Programmable OTP Cells
Figure 1. Package
I
ERASE SUSPEND and RESUME MODES
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
SRAM
I
4 Mbit (256Kb x16)
I
LOW V
DDS
DATA RETENTION: 1.0V
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
FBGA
Stacked LFBGA66 (ZA)
12 x8mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36DR432AD12ZA6T | PS MEDICAL SWITCHING 5V 8A |
| M36DR432AD10ZA6T | PS MEDICAL SWITCHING 24V 1.7A |
| M36DR432A120ZA6C | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B100ZA6C | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432A100ZA6C | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432ADZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432AZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B100ZA6C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。