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參數(shù)資料
| 型號(hào)： | M36L0R7050 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| 中文描述： | 128兆位（多銀行，多層次，突發(fā)）閃存32兆位（200萬× 16）移動(dòng)存儲(chǔ)芯片，1.8V電源多芯片封裝 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大小： | 406K |
| 代理商： | M36L0R7050 |
1/18
December 2004
M36L0R7050T0
M36L0R7050B0
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
FEATURES SUMMARY
MULTI-CHIP PACKAGE
–
1 die of 128 Mbit (8Mb x16, Multiple Bank,
Multi-level, Burst) Flash Memory
–
1 die of 32 Mbit (2Mb x16) Asynchronous
Pseudo SRAM
SUPPLY VOLTAGE
–
V
DDF
= V
DDP
= V
DDQ
= 1.7 to 1.95V
–
V
PPF
= 9V for fast program (12V tolerant)
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Device Code (Top Flash Configuration)
M36L0R7050T0: 88C4h
–
Device Code (Bottom Flash
Configuration) M36L0R7050B0: 88C5h
PACKAGE
–
Compliant with Lead-Free Soldering
Processes
–
Lead-Free Versions
FLASH MEMORY
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode: 54MHz
–
Asynchronous Page Read mode
–
Random Access: 85ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
–
10μs typical Word program time using
Buffer Program
MEMORY ORGANIZATION
–
Multiple Bank Memory Array: 8 Mbit
Banks
–
Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
–
program/erase in one Bank while read in
others
–
No delay between read and write
operations
SECURITY
–
64 bit unique device number
–
2112 bit user programmable OTP Cells
■
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■
■
■
■
■
■
■
Figure 1. Package
■
BLOCK LOCKING
–
All blocks locked at power-up
–
Any combination of blocks can be locked
with zero latency
–
WP
F
for Block Lock-Down
–
Absolute Write Protection with V
PPF
= V
SS
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
ACCESS TIME: 85ns
LOW STANDBY CURRENT: 100μA
DEEP POWER-DOWN CURRENT: 10μA
BYTE CONTROL: UB
P
/LB
P
PROGRAMMABLE PARTIAL ARRAY
8 WORD PAGE ACCESS CAPABILITY: 25ns
PARTIAL POWER-DOWN MODES
–
Deep Power-Down
–
4 Mbit Partial Power-Down
–
8 Mbit Partial Power-Down
–
16 Mbit Partial Power-Down
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TFBGA88 (ZAQ)
8 x 10mm
FBGA
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| M36L0R8060 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0T7050 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 |
| M36L0R7050B0ZAQT | CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 |
| M36L0R7050B0ZAQE | ER 23C 16 12 8 4 SKT RECP WALL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0R7050B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
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