參數(shù)資料
型號(hào)： M36L0R7050T0ZAQ
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
中文描述： 128兆位（多銀行，多層次，突發(fā)）閃存32兆位（200萬× 16）移動(dòng)存儲(chǔ)芯片，1.8V電源多芯片封裝
文件頁數(shù)： 12/18頁
文件大?。?/td> 406K
代理商： M36L0R7050T0ZAQ
M36L0R7050T0, M36L0R7050B0
12/18
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 5., Operating and
AC Measurement Conditions
. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 5. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Note: V
DDQ
= V
DDP
.
Figure 6. AC Measurement Load Circuit
Table 6. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
Flash Memory
PSRAM
Unit
Min
Max
Min
Max
V
DDF
Supply Voltage
1.7
1.95
–
–
V
V
DDP
Supply Voltage
–
–
1.7
1.95
V
V
DDQ
Supply Voltage
1.7
1.95
–
–
V
V
PPF
Supply Voltage (Factory
environment)
8.5
12.6
–
–
V
V
PPF
Supply Voltage (Application
environment)
–0.4
V
DDQ
+0.4
–
–
V
Ambient Operating Temperature
–25
85
–30
85
°C
Load Capacitance (C
L
)
30
50
pF
Output Circuit Resistors (R
1
, R
2
)
16.7
16.7
k
Input Rise and Fall Times
5
5
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDQ
/2
V
AI06161
VDDQ
0V
VDDQ/2
AI08364B
V
DDQ
C
L
C
L
includes JIG capacitance
R
1
DEVICE
UNDER
TEST
0.1μF
V
DDQ
R
2
0.1μF
V
DDF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
15
pF
相關(guān)PDF資料
PDF描述
M36L0R7050 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R8060 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0T7050 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050B0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014
M36L0R7050B0ZAQT CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36L0R7050T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
M36L0R7050T4ZAQE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 160M
M36L0R7050T4ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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