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參數(shù)資料
| 型號(hào)： | M36LLR876B0E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝 |
| 文件頁(yè)數(shù)： | 12/19頁(yè) |
| 文件大小： | 427K |
| 代理商： | M36LLR876B0E |
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M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
12/19
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 4., Operating and
AC Measurement Conditions
. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Table 5. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
Flash Memories
PSRAM
Unit
Min
Max
Min
Max
V
DDF1
/V
DDF2
Supply Voltages
1.7
1.95
–
–
V
V
CCP
Supply Voltage
–
–
1.7
1.95
V
V
DDQF
Supply Voltage
1.7
1.95
–
–
V
V
PPF
Supply Voltage (Factory environment)
8.5
9.5
–
–
V
V
PPF
Supply Voltage (Application environment)
–0.4
V
DDQF
+0.4
–
–
V
Ambient Operating Temperature
–25
85
–25
85
°C
Load Capacitance (C
L
)
30
30
pF
Output Circuit Resistors (R
1
, R
2
)
16.7
16.7
k
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0 to V
DDQF
0 to V
DDQF
V
Input and Output Timing Ref. Voltages
V
DDQF
/2
V
DDQF
/2
V
AI06161b
VDDQF
0V
VDDQF/2
AI08364c
V
DDQF
C
L
C
L
includes JIG capacitance
R
1
DEVICE
UNDER
TEST
0.1μF
V
DDQF
R
2
0.1μF
V
DDF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
14
pF
C
OUT
Output Capacitance
V
OUT
= 0V
18
pF
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