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參數(shù)資料
| 型號： | M36LLR876B0E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動存儲芯片，1.8V電源，多芯片封裝 |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 427K |
| 代理商： | M36LLR876B0E |
M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
14/19
Table 7. Flash 2 DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DDF2
Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQF
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQF
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=5MHz)
E = V
IL
, G = V
IH
13
15
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
23
25
mA
Continuous
25
27
mA
I
DD2
Supply Current
(Reset)
RP = V
SS
± 0.2V
25
70
μA
I
DD3
Supply Current (Standby)
E = V
DDQF
± 0.2V
K=V
SS
25
70
μA
I
DD4
Supply Current (Automatic Standby)
E = V
IL
, G = V
IH
25
70
μA
I
DD5
(1)
Supply Current (Program)
V
PP
= V
PPH
8
20
mA
V
PP
= V
DD
10
25
mA
Supply Current (Erase)
V
PP
= V
PPH
8
20
mA
V
PP
= V
DD
10
25
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
23
40
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=54MHz) in another Bank
35
52
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E = V
DDQF
± 0.2V
K=V
SS
25
70
μA
I
PP1(1)
V
PP
Supply Current (Program)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
V
PP
Supply Current (Erase)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
I
PP2
V
PP
Supply Current (Read)
V
PP
≤
V
DD
0.2
5
μA
I
PP3(1)
V
PP
Supply Current (Standby)
V
PP
≤
V
DD
0.2
5
μA
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