參數(shù)資料
型號(hào)： M36P0R9070E0
廠商： 意法半導(dǎo)體
英文描述： 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述： 512兆位（x16插槽，多銀行，多層次，多突發(fā)）128兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝
文件頁(yè)數(shù)： 20/26頁(yè)
文件大?。?/td> 200K
代理商： M36P0R9070E0
5 DC and AC parameters
M36P0R9070E0
20/26
Table 8.
Flash Memory DC Characteristics - Voltages
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
0
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PPF
Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
V
PPH
V
PPF
Program Voltage Factory
Program, Erase
8.5
9.0
9.5
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DDF
Lock Voltage
1
V
V
RPH
RP
F
pin Extended High Voltage
3.3
V
V
LKOQ
V
DDQ
Lock Voltage
0.9
V
相關(guān)PDF資料
PDF描述
M36P0R9070E0ZAC 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36P0R9070E0_06 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
M36P0R9070E0ZAC 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36P0R9070E0ZACE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36P0R9070E0ZACF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36P0R9070E1ZACE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
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