參數(shù)資料
型號： M36W0R6030T0ZAQ
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
中文描述： 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝
文件頁數(shù)： 22/26頁
文件大?。?/td> 168K
代理商： M36W0R6030T0ZAQ
M36W0R6030T0, M36W0R6030B0
22/26
Figure 15. SRAM Low V
DD
Data Retention AC Waveforms, E1
S
or UB
S
/ LB
S
Controlled
Figure 16. SRAM Low V
DD
Data Retention AC Waveforms, E2
S
Controlled
Table 11. SRAM Low V
DD
Data Retention Characteristic
Symbol
Parameter
Note: 1. Sampled only. Not 100% tested.
Test Condition
Min
Max
Unit
I
DDDR
Supply Current
(Data Retention)
V
DDS
= 1.0V, E1
S
≥
V
DDS
– 0.2V
or E2
S
≤
0.2V,
V
IN
≥
V
DDS
– 0.2V or V
IN
≤
0.2V
10
μA
V
DR
Supply Voltage
(Data Retention)
1.0
V
t
CDR
Chip Disable to Power Down
0
ns
t
R
Operation Recovery Time
70
ns
AI08197B
E1
S
or UB
S
, LB
S
tCDR
V
DDS
tR
DATA RETENTION MODE
V
DDS (min)
V
DDS (min)
V
DR
AI08198B
E2
S
tCDR
V
DDS
tR
DATA RETENTION MODE
V
DDS (min)
V
DDS (min)
V
DR
相關(guān)PDF資料
PDF描述
M36W0R6030T0ZAQE 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQT 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6050B1 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050B1ZAQE 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W0R6030T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R604040B0ZAQE 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package
M36W0R604040B0ZAQF 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package
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