- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377825 > M36W0R6030T0ZAQT (意法半導體) 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package PDF資料下載
參數(shù)資料
| 型號： | M36W0R6030T0ZAQT |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁數(shù)： | 12/26頁 |
| 文件大?。?/td> | 168K |
| 代理商： | M36W0R6030T0ZAQT |
M36W0R6030T0, M36W0R6030B0
12/26
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
Symbol
Parameter
Value
Unit
Min
Max
T
A
Ambient Operating Temperature
–40
85
°C
T
BIAS
Temperature Under Bias
–40
125
°C
T
STG
Storage Temperature
–65
155
°C
T
LEAD
Lead Temperature during Soldering
(1)
°C
V
IO
Input or Output Voltage
–0.5
V
DDQ
+0.6
V
V
DDF
Flash Memory Core Supply Voltage
–0.2
2.45
V
V
DDQ
Input/Output Supply Voltage
–0.2
2.45
V
V
DDS
SRAM Supply Voltage
–0.2
2.4
V
V
PPF
Flash Memory Program Voltage
–0.2
14
V
I
O
Output Short Circuit Current
100
mA
t
VPPFH
Time for V
PPF
at V
PPFH
100
hours
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6050B1 | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050B1ZAQE | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050B1ZAQF | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050T1 | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050T1ZAQE | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R604040B0ZAQE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package |
| M36W0R604040B0ZAQF | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package |
| M36W0R604040B1ZAQE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package |
| M36W0R604040B1ZAQF | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package |
| M36W0R604040T0ZAQE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。