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| 型號： | M36W0R6050B1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| 中文描述： | 64兆位（4兆】16日，多銀行，突發(fā)）閃存和32兆位（2字節(jié)】16）移動(dòng)存儲(chǔ)芯片，多芯片封裝 |
| 文件頁數(shù)： | 16/22頁 |
| 文件大小： | 159K |
| 代理商： | M36W0R6050B1 |
DC and ac parameters
M36W0R6050T1, M36W0R6050B1
16/22
5
DC and ac parameters
This section summarizes the operating measurement conditions, and the dc and ac
characteristics of the device. The parameters in the dc and ac characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 4: Operating and ac measurement conditions
. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 4.
Figure 4.
AC measurement I/O waveform
Operating and ac measurement conditions
Parameter
Flash memory
PSRAM
Unit
Min
Max
Min
Max
V
DDF
Supply Voltage
1.7
1.95
–
–
V
V
DDP
Supply Voltage
–
–
1.7
1.95
V
V
DDQF
Supply Voltage
1.7
1.95
–
–
V
V
PPF
Supply Voltage (Factory environment)
11.4
12.6
–
–
V
V
PPF
Supply Voltage (Application
environment)
–0.4
V
DDQF
+0.4
–
–
V
Ambient Operating Temperature
–30
85
–30
85
°C
Load Capacitance (C
L
)
30
50
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0 to V
DDQF
0 to V
DDP
V
Input and Output Timing Ref. Voltages
V
DDQF
/2
V
DDP
/2
V
AI12057
VDDQF
0V
VDDQF/2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6050B1ZAQE | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050B1ZAQF | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050T1 | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050T1ZAQE | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050T1ZAQF | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6050B1ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050B1ZAQF | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050B3 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP |
| M36W0R6050B3ZAQE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP |
| M36W0R6050B3ZAQF | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP |
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