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參數資料
| 型號： | M36W108T100ZM1T |
| 廠商： | 意法半導體 |
| 英文描述： | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 8兆1兆× 8，啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產品 |
| 文件頁數： | 22/35頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108T100ZM1T |
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M36W108T, M36W108B
22/35
Table 20. Flash Data Polling and Toggle Bits AC Characteristics
(1)
(T
A
= 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V
CCF
= 2.7V to 3.6V)
Note: 1. All other timings are defined in Read AC Characteristics table.
Symbol
Parameter
Flash Memory Chip
Unit
100
120
C
L
= 30pF
C
L
= 100pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid (Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid (Chip Erase, W
Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, EF Controlled)
10
2400
10
2400
μs
Chip Enable High to DQ7 Valid (Chip Erase, EF
Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
40
50
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μs
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μs
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
相關PDF資料 |
PDF描述 |
|---|---|
| M36W108B100ZM1T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZM1T | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Jacket Color:Blue; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes |
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| M36W108AT100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M36W108T100ZM5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZM6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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