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參數(shù)資料
| 型號： | M36W108T120ZM1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Jacket Color:Blue; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes |
| 中文描述： | 8兆1兆× 8，啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產(chǎn)品 |
| 文件頁數(shù)： | 28/35頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108T120ZM1T |
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M36W108T, M36W108B
28/35
Table 22. SRAM Write AC Characteristics
(T
A
= 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V
CCS
= 2.7 V to 3.6 V)
Symbol
Parameter
SRAM Chip
Unit
100
C
L
= 100pF
Min
Max
t
AVAV
Write Cycle Time
100
ns
t
AVWL
Address Valid to Write Enable Low
0
ns
t
AVWH
Address Valid to Write Enable High
80
ns
t
WLWH
Write Enable Pulse Width
70
ns
t
WHAX
Write Enable High to Address Transition
0
ns
t
WHDX
Write Enable High to Input Transition
0
ns
t
WHQX
Write Enable High to Output Transition
0
ns
t
WLQZ
Write Enable Low to Output Hi-Z
0
30
ns
t
AVE1L
Address Valid to Chip Enable 1 Low
0
ns
t
AVE2H
Address Valid to Chip Enable 2 High
0
ns
t
E1HAX
Chip Enable 1 High to Address Transition
0
ns
t
E2LAX
Chip Enable 2 Low to Address Transition
0
ns
t
DVWH
Input Valid to Write Enable High
40
ns
t
DVE1H
Input Valid to Chip Enable 1 High
40
ns
t
DVE2L
Input Valid to Chip Enable 2 Low
40
ns
Figure 17. SRAM Write AC Waveforms, W Controlled
Note: Output Enable (G) = Low.
AI02434
tAVAV
tWHAX
tDVWH
INPUT VALID
A0-A16
E1S
W
DQ0-DQ7
VALID
E2S
tAVWH
tAVE1L
tAVE2H
tWLWH
tAVWL
tWLQZ
tWHDX
tWHQX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108B120ZM1T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108T120ZM5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZM6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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