參數(shù)資料
型號: M38503E4SS
廠商: Mitsubishi Electric Corporation
英文描述: SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
中文描述: 單芯片8位CMOS微機
文件頁數(shù): 67/86頁
文件大?。?/td> 1193K
代理商: M38503E4SS
67
3850 Group (Spec. H)
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
Limits
Typ.
Parameter
200
100
25
100
25
0
0
100
50
10
Symbol
Unit
Write cycle time
Address set up time
Address hold time
Data set up time
Data hold time
WE hold time
CE pulse width
H
CE pulse width
Program time
Erase all blocks time
RY/BY delay time
RP recovery time
t
WC
t
AS
t
AH
t
DS
t
DH
t
WS
t
WH
t
CEP
t
CEPH
t
DAP
t
DAE
t
EHRL
t
PS
Min.
Max.
25
1.5
200
ns
ns
ns
ns
ns
ns
ns
ns
ns
μ
s
s
ns
μ
s
Table 24 Read / Write mode (CE control)
Parameter
Erase all blocks time
Block erase time
Program time (1byte)
1.5
1.0
25
s
s
μ
s
Min.
Typ.
Max.
Unit
Table 25 Erase and program operation
Symbol
Min.
Typ.
Max.
Unit
Table 26 V
CC
power up / power down timing
Parameter
RP = V
IH
set up time
(after rised V
CC
= V
CC
min.)
t
VCS
10
Note :
The read timing parameter in the command write operation mode is same as that of the read-only mode.
Typical value is at V
CC
= 5.0 V, Ta = 25
°
C condition.
Note :
Miserase or miswrite may happen, in case of noise pulse due to the power supply on or off is input to the control pins. Therefore disableing the
write mode is need for prevent from memory data break at the power supply on or off. 10
μ
s (min.) waiting time is need to initiate read or write op-
CC
rises to V
CC
min. at power supply on. The memory data is protected owing to keep the RP pin V
IL
level at power supply off. The
RP pin must be kept V
IL
level for 10
μ
s (min.) after V
CC
rises to V
CC
min. at the power supply on. The RP pin must be kept V
IL
level until the V
CC
falls to the GND level at power supply off. RP pin doesn't have latch mode, so RP pin must be kept V
IH
level during read, erase and program op-
eration.
Flash memory mode Electrical characteristics
(Ta = 25
o
C, V
CC
= 4.5 to 5.5V unless otherwise noted)
μ
s
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