- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377830 > M52D32321A (Elite Semiconductor Memory Technology Inc.) 512K x 32Bit x 2Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | M52D32321A |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 512K x 32Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 32Bit的x 2Banks同步DRAM |
| 文件頁數(shù)： | 4/29頁 |
| 文件大?。?/td> | 707K |
| 代理商： | M52D32321A |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
ES MT
DQ0 ~ 31
Data Input / Output
VDD/VSS
Power Supply/Ground
M52D32321A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.3
4/29
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
VDDQ/VSSQ
Data Output Power/Ground
N.C/RFU
No Connection/
Reserved for Future Use
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ + 150
0.7
50
Unit
V
V
C
°
W
MA
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Storage temperature
Power dissipation
Short circuit current
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0
C
°
~ 70
C
°
)
Parameter
Symbol
V
DD
,V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
Min
1.7
Typ
1.8
1.8
0
-
-
-
-
Max
1.9
V
DDQ
+0.3
0.3
-
0.2
10
10
Unit
V
V
V
V
V
uA
uA
Note
1
2
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Note :
1.V
IH
(max) = 2.2V AC for pulse width
≤
3ns acceptable.
2.V
IL
(min) = -1.0V AC for pulse width
≤
3ns acceptable.
3.Any input 0V
≤
V
IN
≤
V
DDQ
, all other pins are not under test = 0V.
4.Dout is disabled, 0V
≤
V
OUT
≤
V
DDQ
.
0.8 x V
DDQ
-0.3
V
DDQ
– 0.2
-
-10
-10
I
OH
=-0.1mA
I
OL
= 0.1mA
3
4
CAPACITANCE
(V
DD
= 1.8V, T
A
= 25
C
°
, f = 1MHz)
Pin
Symbol
C
CLK
Min
2.0
Max
4.0
Unit
pF
CLOCK
RAS , CAS ,
WE
, CS , CKE, LDQM,
UDQM
ADDRESS
DQ0 ~DQ15
C
IN
2.0
4.0
pF
C
ADD
C
OUT
2.0
3.5
4.0
6.0
pF
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52D32321A-10BG | 512K x 32Bit x 2Banks Synchronous DRAM |
| M52D32321A-7.5BG | 512K x 32Bit x 2Banks Synchronous DRAM |
| M52S128168A | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-10BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-10TG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52D32321A_09 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
| M52D32321A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
| M52D32321A-7.5BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM |
| M52D32321A-7.5BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 1.8V 166MHZ VFBGA90 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 32MB, 1.8V, 166MHZ, VFBGA90 |
| M52D32321A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。