- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377830 > M52S16161A (Elite Semiconductor Memory Technology Inc.) 512K x 16Bit x 2Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | M52S16161A |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁(yè)數(shù)： | 6/29頁(yè) |
| 文件大?。?/td> | 770K |
| 代理商： | M52S16161A |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)
ES MT
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
6/29
-8
-10
Parameter
Symbol
Min
8
15
-
-
Max
Min
10
15
-
-
Max
Unit
Note
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CLK cycle time
t
CC
1000
1000
ns
1
7
12
9
12
CLK to valid
output delay
t
SAC
ns
1
Output data hold time
t
OH
2.5
2.5
ns
2
CLK high pulse width
t
CH
3
3
ns
3
CLK low pulse width
t
CL
3
3
ns 3
Input setup time
t
SS
3
3
ns
3
Input hold time
t
SH
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
-
1
-
ns
2
CAS Latency =3
7
7
CLK to output in
Hi-Z
CAS Latency =2
t
SHZ
-
8
-
9
ns
*All AC parameters are measured from half to half.
Note:
1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S16161A-10BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-10TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-8BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-8TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A | 1M x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S16161A_09 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S16161A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-8BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S16161A-8TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。