參數(shù)資料
型號: M52S32162A-10TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
封裝: 0.400 INCH, LEAD FREE, TSOP2-54
文件頁數(shù): 22/30頁
文件大小: 787K
代理商: M52S32162A-10TG
ES MT
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length =Full page
M52S32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
22/30
*Note:
1.Burst can’t end in full page mode, so auto precharge can’t issue.
2.About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
3.Burst stop is valid at every burst length.
C L O C K
C K E
A D D R
DQ
DQ M
A10/AP
BA
RAa
CAa
CAb
RAa
QAa0 QAa1
QAb1
QAb0
QAb2
*Note1
Row Active
( A-Bank)
Read
(A- Bank)
Burst Stop
Read
(A- Bank)
:Don't Care
HIGH
CL=2
CL=3
QAa2 QAa3 QAa4
QAb3 QAb4 QAb5
QAa0 QAa1
QAb1
QAb0
QAb2
QAa2 QAa3 QAa4
QAb3 QAb4 QAb5
1
1
2
2
Precharge
( A- Bank)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CS
RAS
CAS
WE
*Note2
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