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參數(shù)資料
| 型號： | M58LW128BZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| 中文描述： | 128兆位和8Mb x16或4Mb的X32號，統(tǒng)一座，突發(fā)3V電源閃存 |
| 文件頁數(shù)： | 56/65頁 |
| 文件大小： | 932K |
| 代理商： | M58LW128BZA |
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M58LW128A, M58LW128B
56/65
Table 34. Extended Query information
Note: 1. DQ31-DQ16 are available in the M58LW128B only. They are in the high-impedance state when the device operates In x16 mode.
Address
offset
Address
A23-A1 (M58LW128A)
A23-A2 (M58LW128B)
DQ31-DQ16
(1)
DQ15-DQ0
Description
(P)h
31h
0000h
0050h
0050h; “P”
0052h; “R”
0049h; “I”
Query ASCII string - Extended Table
(P+1)h
32h
0000h
0052h
(P+2)h
33h
0000h
0049h
(P+3)h
34h
0000h
0031h
Major version number
(P+4)h
35h
0000h
0031h
Minor version number
(P+5)h
36h
0000h
008Eh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Protect/Unprotect Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit5, Instant individual block locking Supported
(0=no)
bit6, Protection Bits Supported (0=no)
bit7, Page Read Supported (1=yes)
bit8, Synchronous Read Supported (1=yes)
Bit 31-9 reserved for future use
(P+6)h
37h
0000h
0001h
(P+7)h
38h
0000h
0000h
(P+8)h
39h
0000h
0000h
(P+9)h
3Ah
0000h
0001h
Supported functions after Suspend:
Program allowed after Erase Suspend (1=yes)
(refer to Commands for other allowed functions)
Bit 7-1 reserved for future use
(P+A)h
3Bh
0000h
0001h
Block Status Register
bit 0 Block Protect Bit Status active (1=yes)
bits 1-15 are reserved
(P+B)h
3Ch
0000h
0000h
(P+C)h
3Dh
0000h
0033h
V
DD
OPTIMUM Program/Erase voltage conditions
(P+D)h
3Eh
0000h
0033h
V
PP
OPTIMUM Program/Erase voltage conditions
(P+E)h
3Fh
0000h
0002h
OTP protection: 00 NA, 01 128-bit, 02 OTP area
(P+F)h
40h
0000h
0004h
Page Read: 2
n
Bytes (n = bits 0-7)
(P+10)h
41h
0000h
0004h
Synchronous mode configuration fields
(P+11)h
42h
0000h
0000h
n where 2
n+1
is the number of Words/Double-Words
for the burst Length (= 2)
(P+12)h
43h
0000h
0001h
n where 2
n+1
is the number of Words/Double-Words
for the burst Length (= 4)
(P+13)h
44h
0000h
0002h
n where 2
n+1
is the number of Words/Double-Words
for the burst Length (= 8) (x16 mode only)
(P+14)h
45h
0000h
0007h
burst continuous
相關(guān)PDF資料 |
PDF描述 |
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| M58LW128B150N6E | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N6F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N6T | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1E | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA1F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW128D110N1 | 制造商:Micron Technology Inc 功能描述:128M (16MX8/8MX16) 3V, UNIFORM SECTOR, TSOP56, COM - Trays |
| M58LW64D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58MR016C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016C120ZC6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR016CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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