參數(shù)資料
型號： M58WR032FB70ZB6F
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 22/86頁
文件大?。?/td> 1306K
代理商： M58WR032FB70ZB6F
M58WR032FT, M58WR032FB
22/86
Table 7. Factory Program Commands
Note: 1. WA = Word Address in targeted bank, BKA = Bank Address, PD = Program Data, BA = Block Address.
2. WA1 is the Start Address. NOT WA1 is any address that is not in the same block as WA1.
3. Address can remain Starting Address WA1 or be incremented.
4. Word Addresses 1 and 2 must be consecutive Addresses differing only for A0.
5. Word Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
6. A Bus Read must be done between each Write cycle where the data is programmed or verified to read the Status Register and
check that the memory is ready to accept the next data. n = number of Words, i = number of Pages to be programmed.
7. Address is only checked for the first Word of each Page as the order to program the Words in each page is fixed so subsequent
Words in each Page can be written to any address.
8. Any address within the bank can be used.
9. Any address within the block can be used.
Command
Phase
C
Bus Write Operations
1st
2nd
3rd
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Bank Erase
2
BKA
80h
BKA
D0h
Double Word Program
(4)
3
BKA or
WA1
(8)
35h
WA1
PD1
WA2
PD2
Quadruple Word
Program
(5)
5
BKA or
WA1
(8)
56h
WA1
PD1
WA2
PD2
WA3
PD3
WA4
PD4
Enhanced
Factory
Program
(6)
Setup,
Program
2+
n+1
BKA or
WA1
(8)
30h
BA or
WA1
(9)
D0h
WA1
(2)
PD1
WAn
(3)
PAn
NOT
WA1
(2)
FFFFh
Verify, Exit
n+1
WA1
(2)
PD1
WA2
(3)
PD2
WA3
(3)
PD3
WAn
(3)
PAn
NOT
WA1
(2)
FFFFh
Quadruple
Enhanced
Factory
Program
(5,6)
Setup,
first Load
5
BKA or
WA1
(8)
75h
WA1
(2)
PD1
WA2
(7)
PD2
WA3
(7)
PD3
WA4
(7)
PD4
First
Program &
Verify
Automatic
Subsequent
Loads
4
WA1i
(2)
PD1i
WA2i
(7)
PD2i
WA3i
(7)
PD3i
WA4i
(7)
PD4i
Subsequent
Program &
Verify
Automatic
Exit
1
NOT
WA1
(2)
FFFFh
相關(guān)PDF資料
PDF描述
M58WR032FB70ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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