參數(shù)資料
型號： M58WR032FB70ZB6F
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 50/86頁
文件大小： 1306K
代理商： M58WR032FB70ZB6F
M58WR032FT, M58WR032FB
50/86
Table 22. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. t
WHEL
has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank t
WHEL
is 0ns.
3. Meaningful only if L is always kept low.
Symbol
Alt
Parameter
M58WR032FT/B
Unit
60
70
80
W
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
60
70
80
ns
t
AVLH
Address Valid to Latch Enable High
Min
7
9
9
ns
t
AVWH(3)
Address Valid to Write Enable High
Min
40
45
50
ns
t
DVWH
t
DS
Data Valid to Write Enable High
Min
40
45
50
ns
t
ELLH
Chip Enable Low to Latch Enable High
Min
10
10
10
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
0
ns
t
ELQV
Chip Enable Low to Output Valid
Min
60
70
80
ns
t
ELKV
Chip Enable Low to Clock Valid
Min
7
9
9
ns
t
GHWL
Output Enable High to Write Enable Low
Min
14
17
17
ns
t
LHAX
Latch Enable High to Address Transition
Min
7
9
9
ns
t
LLLH
Latch Enable Pulse Width
Min
7
9
9
ns
t
WHAV(3)
Write Enable High to Address Valid
Min
0
0
0
ns
t
WHAX(3)
t
AH
Write Enable High to Address Transition
Min
0
0
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
0
ns
t
WHEL(2)
Write Enable High to Chip Enable Low
Min
20
25
25
ns
t
WHGL
Write Enable High to Output Enable Low
Min
0
0
0
ns
t
WHLL
Write Enable High to Latch Enable Low
Min
0
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
20
25
25
ns
t
WHQV
Write Enable High to Output Valid
Min
80
95
105
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
40
45
50
ns
P
t
QVVPL
Output (Status Register) Valid to V
PP
Low
Min
0
0
0
ns
t
QVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
0
0
ns
t
VPHWH
t
VPS
V
PP
High to Write Enable High
Min
200
200
200
ns
t
WHVPL
Write Enable High to V
PP
Low
Min
200
200
200
ns
t
WHWPL
Write Enable High to Write Protect Low
Min
200
200
200
ns
t
WPHWH
Write Protect High to Write Enable High
Min
200
200
200
ns
相關(guān)PDF資料
PDF描述
M58WR032FB70ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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