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參數資料
| 型號： | M58WR032FB80ZB6E |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數： | 17/86頁 |
| 文件大小： | 1306K |
| 代理商： | M58WR032FB80ZB6E |
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M58WR032FT, M58WR032FB
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down.
Table 13.
shows the Lock Status af-
ter issuing a Block Lock-Down command. Refer to
the section,
BLOCK LOCKING
, for a detailed ex-
planation and
APPENDIX C.
,
Figure 28., Locking
Operations Flowchart and Pseudo Code
, for a
flowchart for using the Lock-Down command.
Table 5. Standard Commands
Note: 1. X = Don't Care, WA=Word Address in targeted bank, RD = Read Data, SRD = Status Register Data, ESD = Electronic Signature
Data, QD = Query Data, BA = Block Address, BKA = Bank Address, PD = Program Data, PRA = Protection Register Address,
PRD = Protection Register Data, CRD = Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in
Table 6.
3. Any address within the bank can be used.
Commands
C
Bus Operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA
(2)
SRD
Read Electronic Signature
1+
Write
BKA
90h
Read
BKA
(2)
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA
(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA or BA
(3)
20h
Write
BA
D0h
Program
2
Write
BKA or WA
(3)
40h or 10h
Write
WA
PD
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA or BA
(3)
60h
Write
BA
01h
Block Unlock
2
Write
BKA or BA
(3)
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA or BA
(3)
60h
Write
BA
2Fh
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| M58WR032FB80ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032F-ZB | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M58WR032FB80ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT60ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT60ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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