參數(shù)資料
型號： M58WR032FB80ZB6E
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 81/86頁
文件大小： 1306K
代理商： M58WR032FB80ZB6E
81/86
M58WR032FT, M58WR032FB
APPENDIX D. COMMAND INTERFACE STATE TABLES
Table 40. Command Interface States - Modify Table, Next State
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’.EFP and Quad EFP are busy if Block Address is
first EFP Address. Any other commands are treated as data.
Current CI State
Command Input
Read
Array
(2)
(FFh)
WP
setup
(3,4)
(10/40h)
DWP,
QWP
Setup
(3,4)
(35h,
56h)
Block
Erase,
Bank
Erase
Setup
(3,4)
(20h,
80h)
EFP
Setup
(30h)
Quad-
EFP
Setup
(75h)
Erase
Confirm
P/E
Resume,
Block
Unlock
confirm,
EFP
Confirm
(D0h)
Program/
Erase
Suspend
(B0h)
Read
Status
Register
(70h)
Clear
status
Register
(5)
(50h)
Read
Electronic
signature,
Read CFI
Query
(90h, 98h)
Ready
Ready
Program
Setup
Program
Setup
Ready (Lock Error)
Erase Setup EFP Setup
Quad-EFP
Setup
Ready
Lock/CR Setup
Ready
Ready (Lock Error)
OTP
Setup
Busy
Setup
OTP Busy
Program
Program Busy
Busy
Program Busy
Program
Suspended
Program Busy
Suspend
Program Suspended
Program
Busy
Erase Busy
Program Suspended
Erase
Setup
Ready (error)
Ready (error)
Busy
Erase Busy
Erase
Suspended
Erase Busy
Suspend
Erase
Suspended
Program in
Erase
Suspend
Erase Suspended
Erase Busy
Erase Suspended
Program
in Erase
Suspend
Setup
Program Busy in Erase Suspend
Busy
Program Busy in Erase Suspend
Program
Suspend in
Erase
Suspend
Program Busy in Erase Suspend
Suspend
Program Suspend in Erase Suspend
Program
Busy in
Erase
Suspend
Erase
Suspend
EFP Busy
Program Suspend in Erase Suspend
Lock/CR Setup
in Erase Suspend
Erase Suspend (Lock Error)
Erase Suspend (Lock Error)
EFP
Setup
Busy
Ready (error)
Ready (error)
EFP Busy
(6)
EFP Verify
(6)
Quad EFP Busy
(6)
Quad EFP Busy
(6)
Verify
Quad
EFP
Setup
Busy
相關(guān)PDF資料
PDF描述
M58WR032FB80ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBT RECTIFIER SCHOTTKY SINGLE 1A 40V 25A-ifsm 0.9V-vf 10mA-ir DO-41 5K/REEL-13
M58WR032FB DIODE, SCHOTTKY, 20V, 3A.
M58WR032FT60ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FB80ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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